Acoustics at nanoscale: Raman–Brillouin scattering from thin silicon-on-insulator layers

Lou, Na; Groenen, Jesse; Benassayag, Gérard; Zwick, A.

doi:10.1063/1.3499309

Cited by 9 publications

(11 citation statements)

References 8 publications

(14 reference statements)

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“…Having been exploited for a long time for the measurement of the elastic properties of bulk materials [12][13][14] and of films, 12,[15][16][17] they are finding new applications. [18][19][20][21][22][23][24][25][26][27] The accuracy of the elastic characterization achievable by SBS was somehow puzzling since the pioneering work of Sandercock. 28 Although significant insight has been gained on the precision of spectra, 13,29 a comprehensive assessment of the whole measurement process, down to the final results in terms of elastic moduli, does not seem to have been performed.…”

Section: Introductionmentioning

confidence: 99%

Precision and accuracy in film stiffness measurement by Brillouin spectroscopy

Beghi

Fonzo

Pietralunga

et al. 2011

Review of Scientific Instruments

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The interest in the measurement of the elastic properties of thin films is witnessed by a number of new techniques being proposed. However, the precision of results is seldom assessed in detail. Brillouin spectroscopy (BS) is an established optical, contactless, non-destructive technique, which provides a full elastic characterization of bulk materials and thin films. In the present work, the whole process of measurement of the elastic moduli by BS is critically analyzed: experimental setup, data recording, calibration, and calculation of the elastic moduli. It is shown that combining BS with ellipsometry a fully optical characterization can be obtained. The key factors affecting uncertainty of the results are identified and discussed. A procedure is proposed to discriminate factors affecting the precision from those affecting the accuracy. By the characterization of a model transparent material, silica in bulk and film form, it is demonstrated that both precision and accuracy of the elastic moduli measured by BS can reach 1% range, qualifying BS as a reference technique.

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Section: Introductionmentioning

confidence: 99%

Precision and accuracy in film stiffness measurement by Brillouin spectroscopy

Beghi

Fonzo

Pietralunga

et al. 2011

Review of Scientific Instruments

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“…26,27 Therefore, previous studies on ultralow-frequency Raman scattering from a top Si layer with thicknesses of 29−33 nm on a SOI wafer were focused on using visible laser excitation (413.1 nm), even though the penetration depth of the respective laser beam was almost twice the Si thickness. 28,29 In that case, the signal at ultralow frequencies was affected by the background signal from the base Si of the SOI wafer. Therefore, to avoid any further optical effects of the base Si layer on the thin Si NM, modifying the sample structures is critical.…”

mentioning

confidence: 99%

Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes

et al. 2017

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We report on the thickness-dependent Raman spectroscopy of ultrathin silicon (Si) nanomembranes (NMs), whose thicknesses range from 2 to 18 nm, using several excitation energies. We observe that the Raman intensity depends on the thickness and the excitation energy due to the combined effects of interference and resonance from the band-structure modulation. Furthermore, confined acoustic phonon modes in the ultrathin Si NMs were observed in ultralow-frequency Raman spectra, and strong thickness dependence was observed near the quantum limit, which was explained by calculations based on a photoelastic model. Our results provide a reliable method with which to accurately determine the thickness of Si NMs with thicknesses of less than a few nanometers.

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“…Brillouin spectroscopy was exploited to characterize tetrahedral amorphous carbon films of thicknesses of hundreds of nanometres (Chirita et al, 1999), tens of nanometres (Ferrari et al, 1999), down to a few nanometres (Beghi et al, 2002). It was also shown that inelastic light scattering can be sensitive to nanometric thickness differences (Lou et al, 2010). By Brillouin spectroscopy it was also possible to characterize buried layers in silicon-on-insulator structures (Ghislotti & Bottani, 1994).…”

Section: Brillouin Spectroscopymentioning

confidence: 99%