Acoustic-phonon scattering in a rectangular quantum wire

Mickevičius, R.; Mitin, Vladimir

doi:10.1103/physrevb.48.17194

Cited by 55 publications

(37 citation statements)

References 13 publications

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“…I n,l,n ,l ( q ⊥ ) is the electron form factor (which characterizes the confinement of electrons in a RQW). This form factor can be written as [12] I n, ,n ,…”

Section: Calculations Of the Absorption Coefficient Of A Weak Emw In mentioning

confidence: 99%

“…The EMW is assumed to be planar and monochromatic, to have a high frequency, and to propagate along the x direction. In a RQW, the state and the electron energy spectrum have the forms [12] ψ n, , pz =…”

Section: Calculations Of the Absorption Coefficient Of A Weak Emw In mentioning

confidence: 99%

“…In addition, we use expansion: e ±iz sin ϕ = +∞ m=−∞ J m (z)e ±imϕ . Then, we will obtain Equation (12), and it is the quantum kinetic equation for electrons in the RQW in the approximation to second order of C q .…”

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confidence: 99%

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Negative Absorption Coefficient of a Weak Electromagnetic Wave Caused by Electrons Confined in Rectangular Quantum Wires in the Presence of Laser Radiation Modulated by Amplitude

Vuong¹

2014

PIER M

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Abstract-The analytic expressions for the absorption coefficient (ACF) of a weak electromagnetic wave (EMW) by confined electrons in rectangular quantum wires (RQWs) in the presence of laser radiation modulated by amplitude are calculated by using the quantum kinetic equation for electrons with the electron-optical phonon scattering mechanism. Then, the analytic results are numerically calculated and discussed for GaAs/GaAsAl RQWs. The numerical results show that the ACF of a weak EMW in a RQW can have negative values, which means that in the presence of laser radiation (non-modulated or modulated by amplitude), under proper conditions, the weak EMW is increased. This is different from the similar problem in bulk semiconductors and from the case of the absence of laser radiation. The results also show that in some conditions, when laser radiation is modulated by amplitude, ability to increase a weak EMW can be enhanced in comparison with the use of nonmodulated laser radiation.

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“…I n,l,n ,l ( q ⊥ ) is the electron form factor (which characterizes the confinement of electrons in a RQW). This form factor can be written as [12] I n, ,n ,…”

Section: Calculations Of the Absorption Coefficient Of A Weak Emw In mentioning

confidence: 99%

Section: Calculations Of the Absorption Coefficient Of A Weak Emw In mentioning

confidence: 99%

See 1 more Smart Citation

Negative Absorption Coefficient of a Weak Electromagnetic Wave Caused by Electrons Confined in Rectangular Quantum Wires in the Presence of Laser Radiation Modulated by Amplitude

Vuong¹

2014

PIER M

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Section: Introductionmentioning

confidence: 99%

“…Its correct implementation is possible when the rigorous expressions for the scattering rates for all dominant scattering mechanisms in the simulated structure are known. In this connection it is necessary to note that acoustic and polar optical phonon scattering are two of the important scattering mechanisms in GaAs structures with 1DEG [4][5][6][7].Several works were devoted to the calculation of acoustic and polar optical phonon scattering rates (A&POPSR) in quantum wires. Particularly, in the papers [5,7] expressions for the A&POPSR in the rectangular quantum wires were proposed taking into account the collisional broadening (in case of intersubband scattering being the same as the broadening of the energy levels) in the first order approximation.…”

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Self‐consistent calculations of phonon scattering rates in the GaAs transistor structure with one‐dimensional electron gas

Borzdov

Pozdnyakov

Galenchik

et al. 2005

Physica Status Solidi (b)

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Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined, too. It was shown that in order to treat the scattering rates rigorously it is important to search for electron energy levels by means of the self-consistent solution of Schrodinger and Poisson equations and to take into account the collisional broadening.Modern technologies in micro-and nanoelectronics allow different semiconductor device structures of very small sizes and various geometry to be created. In particular, high-speed field effect GaAs transistors with one-dimensional electron gas (1DEG) or, in other words, quantum wire transistors [1,2] have been successfully created and actively investigated. It is supposed that on the basis of these transistors a new generation of high-speed GaAs ULSI circuits can be produced.It is known that the efficient design of such devices today is a very hard problem without numerical simulation of their electrical characteristics. In this regard, one of the most promising simulation methods is the Monte Carlo one [3]. Its correct implementation is possible when the rigorous expressions for the scattering rates for all dominant scattering mechanisms in the simulated structure are known. In this connection it is necessary to note that acoustic and polar optical phonon scattering are two of the important scattering mechanisms in GaAs structures with 1DEG [4][5][6][7].Several works were devoted to the calculation of acoustic and polar optical phonon scattering rates (A&POPSR) in quantum wires. Particularly, in the papers [5,7] expressions for the A&POPSR in the rectangular quantum wires were proposed taking into account the collisional broadening (in case of intersubband scattering being the same as the broadening of the energy levels) in the first order approximation. It was shown that the functions of A&POPSR versus electron kinetic energy have not any singularity points. The latter is especially important for the direct use of the derived expressions in Monte Carlo procedures as it naturally eliminates the tendency to infinity of A&POPSR in singularity points related to the features of the density of states in quantum wires. Besides, the rigorous incorporation of the phonon scattering into the charge transport simulation by means of Monte Carlo method requires the exact knowledge of electron subband energy levels in the considered quantum well as they directly enter into the expressions for A&POPSR. These energy levels in real device structures with an arbitrary quantum well can be found only by means of numerical self-consistent solution of the corresponding Schrodinger and Poisson equations.In this work we present the results of calculation of A&POPSR in the GaAs-transistor structure (see Fig. 1), with taking into account the collisional broadening caused by only acoustic and polar optical phonon scattering, and exa...

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Influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al₂ O₃ nanowires with rectangular cross-section

Pozdnyakov

2009

phys. stat. sol. (b)

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The influence of surface roughness scattering on electron lowfield mobility in thin undoped GaAs-in-Al 2 O 3 nanowires with rectangular cross-section is studied by means of the direct numerical solution of the Boltzmann transport equation at the electric quantum limit for different values of the nanowire cross-section dimensions, the nanowire temperature and the Fermi level in a one-dimensional electron gas. The formulae for calculation of surface roughness scattering matrix elements are derived in such a way that they contain the topological parameter D 2D characterizing the surface roughness instead of the physical one, D 1D , usually used.

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Acoustic-phonon scattering in a rectangular quantum wire

Cited by 55 publications

References 13 publications

Negative Absorption Coefficient of a Weak Electromagnetic Wave Caused by Electrons Confined in Rectangular Quantum Wires in the Presence of Laser Radiation Modulated by Amplitude

Negative Absorption Coefficient of a Weak Electromagnetic Wave Caused by Electrons Confined in Rectangular Quantum Wires in the Presence of Laser Radiation Modulated by Amplitude

Self‐consistent calculations of phonon scattering rates in the GaAs transistor structure with one‐dimensional electron gas

Influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al₂ O₃ nanowires with rectangular cross-section

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Acoustic-phonon scattering in a rectangular quantum wire

Cited by 55 publications

References 13 publications

Negative Absorption Coefficient of a Weak Electromagnetic Wave Caused by Electrons Confined in Rectangular Quantum Wires in the Presence of Laser Radiation Modulated by Amplitude

Negative Absorption Coefficient of a Weak Electromagnetic Wave Caused by Electrons Confined in Rectangular Quantum Wires in the Presence of Laser Radiation Modulated by Amplitude

Self‐consistent calculations of phonon scattering rates in the GaAs transistor structure with one‐dimensional electron gas

Influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al2 O3 nanowires with rectangular cross-section

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Influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al₂ O₃ nanowires with rectangular cross-section