Acoustic filters based on thin single crystal LiNbO&lt;inf&gt;3&lt;/inf&gt; films: Status and prospects

Reinhardt, Alexandre; Benaissa, L.; David, Jean-Baptiste; Lamard, Nathalie; Kovacova, Veronika; Boudou, Nicolas; Defaÿ, E.

doi:10.1109/ultsym.2014.0191

Cited by 9 publications

(10 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This electromechanical coupling factor is sufficient to fabricate filters in the 2–3 GHz range with acceptable bandwidth, but effective electromechanical coupling of the structure decreases as the thickness of the piezoelectric film is reduced with respect to the thicknesses of electrodes and temperature compensation layer. Hence, the upper frequency limit for BAW resonators, based on AlN, is close to 4 GHz, which limits the widespread use of this technology . New suitable low loss materials are needed with larger K 2 to achieve larger bandwidth; this is essential for wireless telecommunication in which the amount of data transmitted is rapidly increasing.…”

Section: Introductionmentioning

confidence: 99%

“…There are about 50 filters in a smartphone, and by 2020, the number of filters will have to increase to 100. Therefore, another emerging research topic is the ability to make tuneable frequency filters that would enable reconfigurable RF front ends, which would radically reduce the number of components . In this case, filters need to continue satisfying existing specifications while providing new functionalities.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, it is widely used in the form of single‐crystal wafers in the SAW industry. The K 2 might be as high as 53% for BAW devices based on X ‐cut LN . This means that a BAW RF filter based on LN could present passband several times broader than that based on AlN films ( Figure ) .…”

Section: Introductionmentioning

confidence: 99%

“…This means that a BAW RF filter based on LN could present passband several times broader than that based on AlN films ( Figure ) . Alternatively, piezoelctric materials with high K 2 can be used for implementation of BAW filters with conventional bandwidths of 2%–5% and the center frequency tuneable by 10%–20% …”

Section: Introductionmentioning

confidence: 99%

“…So far Smart‐Cut TM processing has been optimized mainly for Z ‐ and X ‐cuts of LN and LT. A K 2 of 12.5% for SAW on transferred Y ‐LN films on Si was achieved . Very simple BAW resonators exhibiting an electromechanical coupling factor of 53% were fabricated from the Smart‐Cut TM films. These techniques, based on the fabrication of LN/LT layers from the single‐crystal wafers, demonstrated the large electromechanical properties of lithium niobate ( X ‐ and Y ‐cuts).…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

View full text Add to dashboard Cite

In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations