Acidity of lithographic materials: Characterization by colorimetric titration

Paniez, Patrick Jean; Demattei, D.; Abadie, M. J. M.

doi:10.1016/0167-9317(92)90056-w

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…The influence of absorption cannot be predicted, not only because of the absence of a complete process modeling, but more importantly, because of dramatic modifications in the resist material induced during exposure. This modification relies more on the cancelation of the inhibition phenomenon than on the creation of acidic compounds (12). In fact, the disappearance of the inhibition effect implies much larger consequences on the dissolution rate of the material, than absorption and density effects do on the original material.…”

Section: Energy (Mj/cm2)mentioning

confidence: 99%

Physical description of lithographic processes: correlation between bake conditions and photoresist contrast

1992

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An extensive representation of lithographic processes should not be limited to the description of chemical modifications, but should also take into ,count the variations in physical properties of the film. The origin of these possible variations are shown to lie in the specific film formation technique used in microlithography, namely spin-coating. Deposited from the same solution, layers of different densities exhibiting different properties, can be obtained under various pmcess conditions. The main performance criteria, i. e. absorption, energy-to-clear, contrast and resolution are investigated as a function of these density variations. The results obtained clearly show that variations in film properties with process conditions cannot be only explained by chemical modifications of the lithographic material. This study tries to point out and quantify, in addition to chemical reKtions, the importance of physical properties in lithographic processes.

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Section: Energy (Mj/cm2)mentioning

confidence: 99%

Physical description of lithographic processes: correlation between bake conditions and photoresist contrast

1992

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“…Strictly speaking, the quantity pH is defined as the negative of the logarithm of the hydronium ion (H 3 For a molecule whose emission decreases in an acidic environment (0ϽF BH ϽF B Ϫ) , we define the fractional fluorescence f ϭF/F B Ϫ and the protonated/native fluorescence ratio f R ϭF BH /F B Ϫ. Strictly speaking, the quantity pH is defined as the negative of the logarithm of the hydronium ion (H 3 For a molecule whose emission decreases in an acidic environment (0ϽF BH ϽF B Ϫ) , we define the fractional fluorescence f ϭF/F B Ϫ and the protonated/native fluorescence ratio f R ϭF BH /F B Ϫ.…”

Section: Theorymentioning

confidence: 99%

“…Spectrophotometric and spectrofluorometric titration techniques have used merocyanine dye, 3,4 tetrabromophenol blue, 5-10 rhodamine B base, 11,12 benzothiazole dyes, 11,12 fluorescein, [11][12][13] aromatic monoazines, 14 and the Rhodol derivative Cl-NERF 15,16 as indicators. Spectrophotometric and spectrofluorometric titration techniques have used merocyanine dye, 3,4 tetrabromophenol blue, 5-10 rhodamine B base, 11,12 benzothiazole dyes, 11,12 fluorescein, [11][12][13] aromatic monoazines, 14 and the Rhodol derivative Cl-NERF 15,16 as indicators.…”

Section: Introductionmentioning

confidence: 99%

On-wafer spectrofluorometric evaluation of the response of photoacid generator compounds in chemically amplified photoresists

Feke

Hessman

Grober

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The enhanced photospeed of chemically amplified photoresists is crucial for high throughput lithography required by the semiconductor industry. The photospeed depends directly on the efficiency of the generation of photoacid during exposure, which is a function of the properties of the photoacid generator compound used in the resist. We report a novel technique for photoacid generator evaluation which is convenient, fast, and robust. This technique involves ''whole wafer'' imaging of resist doped with pH-sensitive fluorophores and patterned with an array of fields of varying doses. A spatially encoded map of the response of the compound under study is thus obtained in a single camera image. We measure the amount of photoacid produced as a function of dose for three photoacid generator compounds with reference to the commercial resist Shipley SAL 605. The results demonstrate a one-to-one correspondence with lithographic performance as determined by the normalized remaining thickness technique.

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“…The inductive effect makes the phenolic dimer a stronger acid and causes the well-known hyperacidity of novolak.18-21 Paniez et al have described the same phenomenon in p-cresol oligomers. 22 By the same token, the oxygen atom of the phenol that carries the increased negative charge becomes a stronger hydrogen acceptor. There are many other manifestations of that phenomenon.…”

Section: Phenolic Clustersmentioning

confidence: 99%