Transition-metal oxides (TMOs), such as WO 3 , MoO 3 , V 2 O 5 , and ReO 3 , have been widely used as p-type dopants for organic semiconductors to improve device performances. However, it still remains unclear how charges transport after doping TMOs into organic materials. Here, Monte Carlo simulations are used to study the mechanisms of charge transport in TMO-doped organic semiconductors in a hole-only device. It is found that the charge carriers and the electric field are redistributed after the doping of TMOs, and the density of states distribution broadens. Furthermore, it is shown that new charge transport pathways are formed at medium-to-high doping ratios, leading to more efficient charge transport. At low energetic disorders, the charge mobility drops with the doping of TMOs. However, when the energetic disorder is high, the charge mobility will be improved at high doping ratios of TMOs. The conclusions will also help the understanding of the charge-transport process in electrochemical doped systems.