Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

Peng, Liyuan; Zhao, Degang; Zhu, Jianjun; Wang, Wenjie; Liang, Feng; Jiang, Desheng; Liu, Zongshun; Chen, Ping; Yang, Jing; Liu, Shuangtao; Xing, Yufeng; Zhang, Liqun

doi:10.1016/j.apsusc.2019.144283

Cited by 13 publications

(6 citation statements)

References 39 publications

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“…The relative high IQE of GaN-based MQW could be ascribed to the localized states [13,14] or V-shape pits [15] which can weaken the nonradiative recombination. Subsequently, to get a higher IQE, the techniques to suppress the non-radiative recombination are widely studied [16][17][18]. However, according to ABCmodels, the IQE will also strongly increase with the increasing carrier concentration in MQW due to the enhanced radiative recombination [11].…”

Section: Introductionmentioning

confidence: 99%

The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation

et al. 2022

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In this work, a GaN-based multiple quantum well (MQW) sample has a much higher IQE although it has a stronger non-radiative recombination. Through experimental verification, the higher IQE is attributed to the suppressed carrier leakage mechanism, which is normally neglected under optical excitation. To achieve a more reasonable IQE expression in a GaN MQW structure, leakage factor m is introduced into the ABC-models. Meanwhile, by analyzing the Arrhenius fitting of the plot of IQE-temperature and leakage factor m, the key temperature and excitation power turning on the carrier leakage mechanism was roughly determined to be below 220 K and 10 mW, respectively. Such a low turn-on temperature and excitation power indicates a much easier carrier leakage mechanism in GaN-based MQW, which may be caused by the small effective electron mass of InGaN (0.11–0.22 m*) and the narrow thickness of quantum well via the model calculation of energy band structure via simulation software LASTIP. Moreover, higher IQE can be achieved by suppressing the carrier leakage mechanism via structural optimization (such as electron block layer) in GaN-based MQW.

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Section: Introductionmentioning

confidence: 99%

The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation

et al. 2022

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“…We performed a Gaussian fitting of the PL spectra at room temperature and calculated that the full width at half maximum(FWHM) of the three samples was 32.529, 33.480and 34.279 nm, which further indicated that the screw dislocation of sample A was lower, and an appropriate increase in temperature would improve the growth quality of the sample. Compared with A, the PL peak of C exhibits a larger decrease, indicating that the number of nonradiative recombination centers has increased [19]. We believe that this may be due to the following factors: There is a large stress in InGaN owing to the lattice mismatch between InN and GaN, which is beneficial for introducing many defects, such as point defects and plane defects.…”

Section: Resultsmentioning

confidence: 99%

Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

Wang

et al. 2022

Mater. Res. Express

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We studied the influence of temperature and pressure on the surface morphology and V-defects of the InGaN films. It was found that an appropriate increase in the growth temperature enhanced the mobility of Ga and In atoms, smoothened the surface of the InGaN thin film samples, and improved the growth quality. Simultaneously, increasing the temperature appropriately reduced the surface roughness of the sample and the defect density of the V-defects. It is also found that under the same temperature conditions, a lower pressure weakens the incorporation barrier of atoms, enhances the incorporation efficiency of In atoms, and improves the growth quality of InGaN.

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“…When the temperature increase, carriers transfer from deep localized states to shallow localized states. The energy position of latter’s is located higher [ 34 , 35 ]. Thus, the larger the blue shift, the more inhomogeneous the distribution of localized states.…”

Section: Resultsmentioning

confidence: 99%

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

et al. 2021

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In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H2/NH3 mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.

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Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

Cited by 13 publications

References 39 publications

The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation

The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation

Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

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