Achieving high thermoelectric properties of Bi2S3 via InCl3 doping

Guo, Jun; Ge, Zhen‐Hua; Qian, Feng; Lu, Dehong; Feng, Jing

doi:10.1007/s10853-019-04008-3

Cited by 28 publications

(28 citation statements)

References 45 publications

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“…The optical bandgap of Bi 2 S 3 can be evaluated based on the Kubelka–Munk theory. [ 11,17 ] The optical absorption edges of all samples shift to lower energies and then shift back at x = 2.0. The corresponding bandgap values of the BS ( x mL HCl, where x = 0.0, 0.5, 1.0, 2.0) samples were 1.44, 1.42, 1.34, and 1.38 eV [Figure 4d], respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Temperature dependence of a) thermal diffusion coefficient, b) total thermal conductivity, c) lattice thermal conductivity of BS( x mL HCl, where x = 0.0, 0.5, 1.0, 2.0) bulk samples, d) Temperature dependent κ L of Bi 2 S 3 fabricated by nonhydrothermal [BiCl 3 (QZ), [ 12 ] SbCl 3 , [ 25 ] InCl 3 , [ 11 ] Ce, [ 22 ] ] and hydrothermal (CuCl 2 , [ 3a ] Bi@Bi 2 S 3 , [ 26 ] nanonet‐work [ 5a ] ) and Bi 2 S 3 (0.5 mL HCl) present in this work; Temperature dependence of e) ZT , and f) ZT peak and average ZT .…”

Section: Resultsmentioning

confidence: 99%

“…[ 24 ]

\begin{matrix} κ_{lat \min} = \frac{π}{4} k_{normalB} V^{- \frac{2}{3}} υ_{normala} \end{matrix}

where k B is the Boltzmann parameter, V is the unit cell volume, and υ a is the average speed of phonons. Figure 8d shows a comparison of the temperature‐dependent κ L of Bi 2 S 3 fabricated by a nonsolution method [BiCl 3 (QZ), [ 12 ] SbCl 3 , [ 25 ] InCl 3 , [ 11 ] Ce, [ 22 ] ], a solution method (CuCl 2 , [ 3a ] Bi@Bi 2 S 3 , [ 26 ] nanonet‐work [ 5a ] ), and BS (0.5 mL HCl) in this work. It is obvious that the κ L of BS (0.5 mL HCl) is lower than that of most other element‐doped BS systems and comparable to that of the SbCl 3 ‐doped system over the investigated temperature range.…”

Section: Resultsmentioning

confidence: 99%

“…Bismuth sulfide (Bi 2 S 3 )‐based semiconductors are expected to be promising medium‐temperature TE materials owing to their low toxicity and environmentally friendly ingredients. [ 11 ] Nevertheless, the low electrical conductivity of pristine Bi 2 S 3 restricts its enhancement of TE properties [ 3a,12 ] Therefore, improving the electrical conductivity and power factor of Bi 2 S 3 is the primary goal for enhancing its TE properties. Doping with high‐valence elements such as halogens in the S 2− position is an effective approach to enhancing the electrical transport properties of Bi 2 S 3 .…”

Section: Introductionmentioning

confidence: 99%

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Realizing High Thermoelectric Performance in Earth‐Abundant Bi₂S₃ Bulk Materials via Halogen Acid Modulation

Guo

Yang

et al. 2021

Adv Funct Materials

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Bi2S3‐based thermoelectric materials without toxic and expensive elements have a high Seebeck coefficient and intrinsic low thermal conductivity. However, Bi2S3 suffers from low electrical conductivity, which makes it a less‐than‐perfect thermoelectric material. In this work, halogen elements F, Cl, and Br from halogen acid are successfully introduced into the Bi2S3 lattice using a hydrothermal procedure to efficiently improve the carrier concentration. Compared with the pure sample, the electron concentration of the Bi2S3 sample treated with HCl is increased by two orders of magnitude. An optimal power factor of 470 µW m−1 K−2 for the Bi2S2.96Cl0.04 sample at 673 K is obtained. Density functional theory calculations reveal that an effective delocalized electron conductive network forms after Cl doping, which raises the Fermi level into the conduction bands, thus generating more free electrons and improving the conductivity of the Bi2S3‐based materials. Ultimately, an excellent ZT of ≈0.8 is achieved at 673 K for the Bi2S2.96Cl0.04 sample, which is one of the highest values reported for a state‐of‐the‐art Bi2S3 system. The energy conversion efficiency of the module reaches 2.3% at 673 K with a temperature difference of 373 K. This study offers a new method for enhancing the thermoelectric properties of Bi2S3 by adding halogen acid in the hydrothermal process for powder synthesis.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…[ 24 ]

\begin{matrix} κ_{lat \min} = \frac{π}{4} k_{normalB} V^{- \frac{2}{3}} υ_{normala} \end{matrix}

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Realizing High Thermoelectric Performance in Earth‐Abundant Bi₂S₃ Bulk Materials via Halogen Acid Modulation

Guo

Yang

et al. 2021

Adv Funct Materials

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“…Bi 2 S 3 possesses a large Seebeck (about 480 µV K −1 ) and surprisingly low κ, [ 16–18 ] however, its large electrical resistivity results in a low ZT value of ≈0.05 at room temperature. [ 5 ] On the other hand, CNTs have been widely used in composite TE materials in recent years, due to its excellent electrical conductivity, low dimensional nanoscale, and extraordinary thermal properties.…”

Section: Introductionmentioning

confidence: 99%

Bismuth Sulfide Strongly Coupled to Functionalized MWNTs Hybrids with Improved Thermoelectric Properties

Liao

Liu

Jia

et al. 2021

Adv Elect Materials

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The efficiency of thermoelectric (TE) materials depends on an interplay between various material properties, and strategies for co‐optimizing these properties will be necessary for implementing these materials in the future. In this work, bismuth sulfide (Bi2S3) and acid treated multiwalled carbon nanotube (f‐MWNT) composites are fabricated by wet chemical synthesis at room temperature. Bi2S3 is intimately anchored onto the surface of the f‐MWNT to form a coaxial nanostructure. The power factor of the composite is enhanced relative to both the pure Bi2S3 and MWNTs, due to a large enhancement of the electrical conductivity. The enhanced conductivity is attributed to restructuring of the bismuth (Bi) and oxygen (O) bonding environments when Bi2S3 is chemically interfaced with the f‐MWNTs, suggestive of the formation of a strongly coupled complex via BiO/BiS bonds. Strong‐coupling is further supported by scanning transmission electron microscopy, Raman, and diffuse reflectance spectroscopy, which reveal fast charge‐transfer between the Bi2S3 and MWNT when interfaced together. These results support material compositing as a potential strategy for engineering enhanced TE materials.

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Strain‐Mediated Lattice Rotation Design for Enhancing Thermoelectric Performance in Bi₂S₂Se

Mansoor

Jabar

et al. 2023

Adv Funct Materials

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A unique strain-mediated lattice rotation strategy is introduced via nanocompositing to upsurge the optimized limits in the composition-to-structural pathway on rationally engineering the efficient thermoelectric material. In this study, a special lattice rotation via strain engineering is realized to optimize the desired electronic and chemical environment for enhancing thermoelectric properties in n-type Bi 2 S 2 Se. This approach results in a unique transport phenomenon to assist high-energy electrons in transferring through the optimized transport channels, and appropriate structure disparity to significantly localize phonons. As a result, Sb over Cl doping in Bi 2 S 2 Se gently reduces E g and introduces defect states in bandgap with shifting down the Fermi level, thus causing increase in carrier concentration, which contributes to a higher power factor of ≈7.18 µW cm −1 K −2 (at T = 773 K). Besides, a lower thermal conductivity of ≈0.49 W m −1 K −1 is driven through lattice strain and defect engineering. Consequently, an ultra-high ZT max = 1.13 (at T = 773 K) and a high ZT ave = 0.54 (323 K-773 K) are realized. This study not only leads to an extraordinary thermoelectric performance but also reveals a unique paradigm for electron transportation and phonon localization via lattice strain engineering.

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Achieving high thermoelectric properties of Bi2S3 via InCl3 doping

Cited by 28 publications

References 45 publications

Realizing High Thermoelectric Performance in Earth‐Abundant Bi₂S₃ Bulk Materials via Halogen Acid Modulation

Realizing High Thermoelectric Performance in Earth‐Abundant Bi₂S₃ Bulk Materials via Halogen Acid Modulation

Bismuth Sulfide Strongly Coupled to Functionalized MWNTs Hybrids with Improved Thermoelectric Properties

Strain‐Mediated Lattice Rotation Design for Enhancing Thermoelectric Performance in Bi₂S₂Se

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Achieving high thermoelectric properties of Bi2S3 via InCl3 doping

Cited by 28 publications

References 45 publications

Realizing High Thermoelectric Performance in Earth‐Abundant Bi2S3 Bulk Materials via Halogen Acid Modulation

Realizing High Thermoelectric Performance in Earth‐Abundant Bi2S3 Bulk Materials via Halogen Acid Modulation

Bismuth Sulfide Strongly Coupled to Functionalized MWNTs Hybrids with Improved Thermoelectric Properties

Strain‐Mediated Lattice Rotation Design for Enhancing Thermoelectric Performance in Bi2S2Se

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Realizing High Thermoelectric Performance in Earth‐Abundant Bi₂S₃ Bulk Materials via Halogen Acid Modulation

Realizing High Thermoelectric Performance in Earth‐Abundant Bi₂S₃ Bulk Materials via Halogen Acid Modulation

Strain‐Mediated Lattice Rotation Design for Enhancing Thermoelectric Performance in Bi₂S₂Se