Achieving Efficient Multichannel Conductance in Through‐Space Conjugated Single‐Molecule Parallel Circuits

Shen, Pingchuan; Huang, Miao-Ling; Qian, Jingyu; Li, Jinshi; Ding, Siyang; Zhou, Xiao‐Shun; Xu, Bin; Zhao, Zujin; Tang, Ben Zhong

doi:10.1002/anie.202000061

Cited by 41 publications

(35 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In the high-temperature regime, the resonant tunneling and the hopping likely coexist (see Figure for further discussion). While such a coexistence has been previously observed in molecular junctions with multiconduction channels, − our observation is based on the single channel of the localized BIPY group.…”

mentioning

confidence: 59%

Interplay of Fermi Level Pinning, Marcus Inverted Transport, and Orbital Gating in Molecular Tunneling Junctions

Kang

Kong

Byeon

et al. 2020

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

This Letter examines the interplay of important tunneling mechanismsFermi level pinning, Marcus inverted transport, and orbital gatingin a molecular rectifier. The temperature dependence of the rectifying molecular junction containing 2,2′-bipyridyl terminated n-alkanethiolate was investigated. A bell-shaped trend of activation energy as a function of applied bias evidenced the dominant occurrence of unusual Marcus inverted transport, while retention of rectification at low temperatures implied that the rectification obeyed the resonant tunneling regime. The results allowed reconciling two separately developed transport models, Marcus–Landauer energetics and Fermi level pinning-based rectification. Our work shows that the internal orbital gating can be substituted with the pinning effect, which pushes the transport mechanism into the Marcus inverted regime.

show abstract

mentioning

confidence: 59%

Interplay of Fermi Level Pinning, Marcus Inverted Transport, and Orbital Gating in Molecular Tunneling Junctions

Kang

Kong

Byeon

et al. 2020

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

show abstract

“…We employed a modified scanning tunneling microscopy break junction (STM-BJ) technique [30][31][32][33] to fabricate singlemolecule junctions and investigate their response under the electric field (Figure 1a). Five molecules were employed, as listed in Table S1 in the Supporting Information.…”

Section: Recent Progress In Addressing Electrically Driven Single-molmentioning

confidence: 99%

Selective Fabrication of Single‐Molecule Junctions by Interface Engineering

Zeng

Wang

Qian

et al. 2020

Small

View full text Add to dashboard Cite

Recent progress in addressing electrically driven single‐molecule behaviors has opened up a path toward the controllable fabrication of molecular devices. Herein, the selective fabrication of single‐molecule junctions is achieved by employing the external electric field. For molecular junctions with methylthio (–SMe), thioacetate (–SAc), amine (–NH2), and pyridyl (–PY), the evolution of their formation probabilities along with the electric field is extracted from the plateau analysis of individual single‐molecule break junction traces. With the increase of the electric field, the SMe‐anchored molecules show a different trend in the formation probability compared to the other molecular junctions, which is consistent with the density functional theory calculations. Furthermore, switching from an SMe‐anchored junction to an SAc‐anchored junction is realized by altering the electric field in a mixed solution. The results in this work provide a new approach to the controllable fabrication and modulation of single‐molecule junctions and other bottom‐up nanodevices at molecular scales.

show abstract

“…1). Тонкие и ультратонкие слои 4Q на поверхности твердотельных подложек продемонстрировали полупроводниковые свойства [8,9] и возможность использования в качестве электронных устройств на основе отдельных молекул [10]. Согласно результатам работы [8], значения оптической ширины запрещенной зоны термически осажденных в вакууме пленок 4Q составляли 2.3−2.4 eV.…”

Section: Introductionunclassified

Незаполненные электронные состояния ультратонких пленок кватерфенила на поверхностях послойно сформированного CdS и окисленного кремния

Комолов¹,

Лазнева²,

Герасимова³

et al. 2021

Физика Твердого Тела

View full text Add to dashboard Cite

The results of a study of unoccupied electronic states and the formation of a boundary potential barrier during thermal vacuum deposition of ultrathin films of 4-quaterphenyl oligophenylene on the surface of CdS and on the surface of oxidized silicon are presented. Using X-ray photoelectron spectroscopy (XPS) it was determined, that the atomic concentrations of Cd and S were equal in the surface layer of a 75-nm-thick CdS film formed by atomic layer deposition (ALD). The electronic properties of 4-quaterphenyl films up to 8 nm thick were studied during their deposition on the surface of the CdS layer and on the surface of oxidized silicon using total current spectroscopy (TCS) in the energy range from 5 eV to 20 eV above EF. The energetic position of the main maxima of the fine structure of the total current spectra (FSTCS) of 4-quaterphenyl films was determined. The location of the maxima was reproducible when two selected substrate materials were used. A minor decrease in the work function, from 4.2 eV to 4.1 eV, was registered during the thermal deposition of 4-quaterphenyl onto the CdS surface. During the deposition of a 4-quaterphenyl film on the oxidized silicon surface, an increase in the work function from 4.2 eV to 4.5 eV was found. Possible mechanisms of the physicochemical interaction between the 4-quaterphenyl film and the surface of the investigated substrates, which lead to a difference in the observed values of the work function of the films on these substrates, are discussed.

show abstract

Achieving Efficient Multichannel Conductance in Through‐Space Conjugated Single‐Molecule Parallel Circuits

Cited by 41 publications

References 53 publications

Interplay of Fermi Level Pinning, Marcus Inverted Transport, and Orbital Gating in Molecular Tunneling Junctions

Interplay of Fermi Level Pinning, Marcus Inverted Transport, and Orbital Gating in Molecular Tunneling Junctions

Selective Fabrication of Single‐Molecule Junctions by Interface Engineering

Незаполненные электронные состояния ультратонких пленок кватерфенила на поверхностях послойно сформированного CdS и окисленного кремния

Contact Info

Product

Resources

About