2018
DOI: 10.1002/adfm.201705425
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Achieving a Record Fill Factor for Silicon–Organic Hybrid Heterojunction Solar Cells by Using a Full‐Area Metal Polymer Nanocomposite Top Electrode

Abstract: Carrier collection in conventional n‐type Si (n‐Si)/organic hybrid heterojunction solar cells (HHSCs) is mainly limited by the nonoptimized top grid‐electrode and inadequate work function (WF) of the PH1000‐type poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). Here, a novel modified metal polymer nanocomposite top electrode (M‐MPNTE) is designed to achieve a full‐area carrier collection in n‐Si/PEDOT:PSS HHSCs. The carrier collection in both lateral and vertical directions is significantly … Show more

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Cited by 27 publications
(18 citation statements)
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“…[ 145 ] An FF of 82% surpasses all previous work for CNT‐Si heterojunction solar cells, while being a record for dopant‐free contact architectures, including hole‐selective MoO x and PEDOT based Si solar cells. [ 123c,146 ] We speculated that the high FF was related to the CNTs themselves and that it was a result of their higher carrier mobility. [ 147 ] Due to the work function difference between p‐type CNTs and n‐type silicon a built‐in potential is established and the use of dopants only further enhances the work function of the CNTs and band bending at the interface.…”
Section: Carbon Nanotubes In Silicon Photovoltaicsmentioning
confidence: 99%
“…[ 145 ] An FF of 82% surpasses all previous work for CNT‐Si heterojunction solar cells, while being a record for dopant‐free contact architectures, including hole‐selective MoO x and PEDOT based Si solar cells. [ 123c,146 ] We speculated that the high FF was related to the CNTs themselves and that it was a result of their higher carrier mobility. [ 147 ] Due to the work function difference between p‐type CNTs and n‐type silicon a built‐in potential is established and the use of dopants only further enhances the work function of the CNTs and band bending at the interface.…”
Section: Carbon Nanotubes In Silicon Photovoltaicsmentioning
confidence: 99%
“…So the silver film thickness can balance the conductivity and transmittance simultaneously to support the growth of homogeneous and continuous ultrathin Ag film by suppressing the 3D island growth mode of Ag on heterogeneous surface. [ 25 ] As presented in Figure a, R ▫ of the bare Ag and MoO x /Ag is decreased with increasing Ag thickness. Compared to the 12 nm thick bare Ag electrode with R ▫ up to 47.8 Ω/▫, the MoO x /Ag (12 nm) electrode exhibits a sharply decreased R ▫ of 8.6 Ω/▫, revealing that the MoO x buffer layer can greatly affect the film structure and hence the electrical property of the ultrathin Ag.…”
Section: Figurementioning
confidence: 99%
“…However, there are still some challenges for the application of ultrathin silver films in high performance semitransparent PSCs. First, the 3D growth mode of silver results in separate islands for film thickness below 10 nm, which leads not only low conductivity due to disconnect between parts of the electrode, but also optical loss due to surface plasmonic effect . The smooth and cross‐connecting surface morphology of ultrathin silver film is necessary to realize high performance semitransparent PSCs.…”
Section: Summary Of the Photovoltaic Performances Of The Inverted Plamentioning
confidence: 99%