2019
DOI: 10.1021/acsami.9b06463
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Achieving a High Thermoelectric Performance of Tetrahedrites by Adjusting the Electronic Density of States and Enhancing Phonon Scattering

Abstract: Recently, many researchers have focused on tetrahedrite-based compounds due to their intrinsic low thermal conductivity; however, their thermoelectric performance is limited by the lower power factor. In this case, using Ge doping on Sb sites, the power factor is obviously enhanced due to an increment in carrier concentration and density of states; simultaneously, the thermal conductivity is substantially suppressed by atomic defects. Also, ZnO nanoparticles are introduced in the Ge-doped compounds to further … Show more

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Cited by 16 publications
(26 citation statements)
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“…The Cu 3 SbS 4 second-phase impurity was eliminated after annealing. As demonstrated by the X-ray diffraction (XRD) pattern (Figure 1d), all of the diffraction peaks of unannealed samples and annealed samples were well-indexed to tetrahedrite crystalline phase (PDF#42-0561) except for a small amount of impurity phase Cu 3 SbS 4 (PDF#35-0581) found in unannealed samples, which is consistent with previously reported works; [22,35,36,46] however, no recognizable diffraction peak of the Cu 3 SbS 4 phase was detected in the annealed samples, indicating that the annealing process facilitated the transformation of Cu 3 SbS 4 phase into pure Cu 12 Sb 4 S 13 phase; thus, the XRD peaks of AD 0 vol% showed a clear shift. The carrier mobility of the annealed samples might be improved due to compensation for intrinsic vacancies after this process.…”
Section: Resultssupporting
confidence: 90%
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“…The Cu 3 SbS 4 second-phase impurity was eliminated after annealing. As demonstrated by the X-ray diffraction (XRD) pattern (Figure 1d), all of the diffraction peaks of unannealed samples and annealed samples were well-indexed to tetrahedrite crystalline phase (PDF#42-0561) except for a small amount of impurity phase Cu 3 SbS 4 (PDF#35-0581) found in unannealed samples, which is consistent with previously reported works; [22,35,36,46] however, no recognizable diffraction peak of the Cu 3 SbS 4 phase was detected in the annealed samples, indicating that the annealing process facilitated the transformation of Cu 3 SbS 4 phase into pure Cu 12 Sb 4 S 13 phase; thus, the XRD peaks of AD 0 vol% showed a clear shift. The carrier mobility of the annealed samples might be improved due to compensation for intrinsic vacancies after this process.…”
Section: Resultssupporting
confidence: 90%
“…b) Comparison of zT ave (the cold‐ and hot‐side temperatures of 323 and 723 K, respectively) and maximum zT max of tetrahedrites with different compositions. [ 28,32,35,36,58 ] c) Schematic of a segmented single‐leg; the low‐ and high‐temperature materials are Cu 0.001 Bi 0.3 Sb 1.699 Te 3 and porous AP 0.7 vol%, respectively. d) The predicted conversion efficiency (η) in the temperature range of 300–723 K based on the zT values.…”
Section: Resultsmentioning
confidence: 99%
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“…To enhance its thermoelectric performance, doping of mechanochemically synthesized Cu 12 Sb 4 S 13 is a promissing possibility as can be seen from papers published recently, see e.g. [81][82][83][84][85] .…”
Section: Tetrahedrite Cu 12 Sb 4 S 13mentioning
confidence: 99%