Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

Masuko, K.; Shigematsu, Masayuki; Hashiguchi, Taiki; Fujishima, Daisuke; Kai, Motohide; Yoshimura, Nagahisa; Yamaguchi, Tsutomu; Ichihashi, Yoshinari; Mishima, Takahiro; Matsubara, Noriaki; Yamanishi, Tsutomu; Takahama, T.; Taguchi, Mikio; Maruyama, Eiji; Okamoto, Shingo

doi:10.1109/jphotov.2014.2352151

Cited by 1,120 publications

(634 citation statements)

References 13 publications

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“…1,2 The record efficiency of crystalline silicon (c-Si) single-junction PV devices has increased from 25% to 25.6% during the last fifteen years, 3,4 asymptotically approaching the 29.4% Auger-recombination-constrained Shockley-Queisser limit. 5 To make PV modules with higher efficiency than market-leading c-Si while leveraging existing c-Si manufacturing capacity, Si-based tandem approaches have been proposed.…”

mentioning

confidence: 99%

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

Mailoa

Bailie

Johlin

et al. 2015

Applied Physics Letters

510

447

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With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. We achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

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mentioning

confidence: 99%

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

Mailoa

Bailie

Johlin

et al. 2015

Applied Physics Letters

510

447

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“…2 In recent years, a-Si:H layers also garnered significant attention, thanks to their excellent crystalline silicon (c-Si) surface passivation properties, even when only a few nm thin. [3][4][5][6][7][8] This property is exploited with remarkable success for passivating-contact fabrication in silicon heterojunction (SHJ) solar cells, [9][10][11][12][13][14][15][16][17][18][19][20][21][22] with reported conversion cell efficiencies as high as 26.3%. 23 For any solar cell technology, an important criterion for ultimate device performance is its stability under prolonged light exposure.…”

mentioning

confidence: 99%

Light-induced performance increase of silicon heterojunction solar cells

Kobayashi

Wolf

Levrat

et al. 2016

Applied Physics Letters

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Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

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“…В области солнечной энергетики сейчас большую популярность наби-рают элементы, содержащие гетеропереход аморфный гидрогенизиро-ванный кремний (a-Si : H) -монокристаллический кремний с проме-жуточным слоем из собственного a-Si : H (международная аббревиату-ра HIT -Heterojunction with Intrinsic Thin Layer). Здесь значения КПД фотопреобразования превышают 20% в условиях AM1.5 [14]. Большие значения КПД фотопреобразования HIT-элементов позволяют надеять-ся на их эффективную люминесценцию.…”

Section: поступило в редакцию 30 декабря 2016 гunclassified

Люминесценция солнечных элементов с гетеропереходом a-Si : H/c-Si

Жигунов¹,

Ilin²,

Форш³

et al. 2017

Письма В Журнал Технической Физики

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Исследованы электролюминесценция и фотолюминесценция солнечных элементов, содержащих гетеропереходы a-Si : H/c-Si. Установлено, что как электролюминесценция, так и фотолюминесценция исследованных элементов определяются излучательной рекомбинацией неравновесных носителей заряда в кристаллическом кремнии. Продемонстрировано, что внешний энергетический выход (КПД) электролюминесценции солнечных элементов с гетеропереходом a-Si : H/c-Si составляет при комнатной температуре значение 2.1%, что превосходит имеющиеся на данный момент значения для кремниевых диодных структур. Столь значительные величины КПД электролюминесценции могут объясняться хорошей пассивацией поверхности кристаллического кремния и соответственно увеличением времени жизни неосновных носителей заряда в исследованных элементах. DOI: 10.21883/PJTF.2017.10.44626.16626

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Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

Cited by 1,120 publications

References 13 publications

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

Light-induced performance increase of silicon heterojunction solar cells

Люминесценция солнечных элементов с гетеропереходом a-Si : H/c-Si

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