Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design

Kawai, Seitaro; Sato, S.; Maki, Shotaro; Tokgoz, Korkut Kaan; Okada, Kei; Matsuzawa, Akira

doi:10.1109/tmtt.2016.2549527

Cited by 12 publications

(3 citation statements)

References 23 publications

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“…5(c)], and the mismatch between simulation and measurement is likely due to the transistor model inaccuracy over 130 GHz. This is because these two transistors (20 × 1 and 20 × 2 µm) are newly prepared for this design, while the transmission line and capacitors have been used in the W-band and 300-GHz band [65], [69], [70]. Fig.…”

Section: B Wideband Rf Pa and Rf Vgamentioning

confidence: 99%

A Sub-THz Full-Duplex Phased-Array Transceiver With Self-Interference Cancellation and LO Feedthrough Suppression

Wang,

Abdo,

Liu

et al. 2024

IEEE J. Solid-State Circuits

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A sub-THz (88-136 GHz) full-duplex (FD) phasedarray transceiver (TRX) integrating an RF self-interference (SI) canceller with differential feeding FD antennas is presented in this work. The LO phase generation chain controls differential transmitter outputs for the phased-array operation. The differential feeding FD antenna with differential pairs of chips achieves over 35-dB SI suppression. The SI suppression is improved by 20 dB when the SI canceller is turned on. Without any digital-domain SI cancellation (SIC), a total SI suppression of >60 dB is achieved over a 2-GHz bandwidth. The proposed neutralized mixer with over 20-dB LO feedthrough suppression and wideband RF amplifiers support a large data rate at sub-THz frequencies. This is the world's first demonstrated sub-THz FD phased-array TRX. In the over-the-air (OTA) measurements for FD mode, the proposed FD TRX achieves 6 Gb/s in 8PSK and 4 Gb/s in 16QAM. It also achieves a 112-Gb/s data rate for OTA TX-to-RX.

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Section: B Wideband Rf Pa and Rf Vgamentioning

confidence: 99%

A Sub-THz Full-Duplex Phased-Array Transceiver With Self-Interference Cancellation and LO Feedthrough Suppression

Wang,

Abdo,

Liu

et al. 2024

IEEE J. Solid-State Circuits

Self Cite

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“…However, the intrinsic model of the transistor in practice is shown in Fig. 6 [21]. Cgd and Rgd jointly create the feedback path between the gate and drain, and they can be equivalent to a capacitor with a certain quality factor, which can be calculated as:…”

Section: B Neutralization Capacitance Designmentioning

confidence: 99%

“…where Cgd and Rgd are intrinsic parameters of the transistor so they are independent of the operating frequency [21]. Therefore, the Q of this equivalent capacitance will decrease as the operating frequency increases.…”

Section: B Neutralization Capacitance Designmentioning

confidence: 99%

A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm P_sat for Sub-THz Imaging System

Zhang

Nie

et al. 2021

IEEE Access

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This paper presents a high-gain D-band power amplifier (PA) fabricated with 28-nm CMOS technology for a sub-terahertz frequency modulated continuous wave imaging system. It adopts two-channel power combining using artificial transmission lines to absorb the parasitic capacitance of the ground-signalground pad. The layout of the transistors and neutralization capacitors are optimized to improve the maximum stable gain, stability, and robustness. Asymmetrically magnetically coupled resonators are used in inter-stage and input matching networks to extend the operating bandwidth. The PA achieves a peak power gain of 21.9 dB and maximum output power of 11.8 dBm with 10.7% of power-added efficiency. Also, this PA can achieve higher than 10 dBm output power over the frequency range of 120-150 GHz.INDEX TERMS D-band, power amplifier (PA), sub-terahertz (sub-THz), CMOS, power combining, imaging system, frequency modulated continuous wave (FMCW).

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Electronic Design Automation for Millimeter-Wave Research and Design

Božanić

Sinha

2020

Lecture Notes in Electrical Engineering

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Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design

Cited by 12 publications

References 23 publications

A Sub-THz Full-Duplex Phased-Array Transceiver With Self-Interference Cancellation and LO Feedthrough Suppression

A Sub-THz Full-Duplex Phased-Array Transceiver With Self-Interference Cancellation and LO Feedthrough Suppression

A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm P_sat for Sub-THz Imaging System

Electronic Design Automation for Millimeter-Wave Research and Design

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Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design

Cited by 12 publications

References 23 publications

A Sub-THz Full-Duplex Phased-Array Transceiver With Self-Interference Cancellation and LO Feedthrough Suppression

A Sub-THz Full-Duplex Phased-Array Transceiver With Self-Interference Cancellation and LO Feedthrough Suppression

A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psat for Sub-THz Imaging System

Electronic Design Automation for Millimeter-Wave Research and Design

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Resources

About

A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm P_sat for Sub-THz Imaging System