1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)
DOI: 10.1109/sispad.1996.865273
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Accurate prediction of hot-carrier effects for a deep sub-μm CMOS technology based on inverse modeling and full band Monte Carlo device simulation

C. Jungemann
1
,
S. Yamaguchi
2
,
Hiroshi G. Okuno
3
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Inverse modeling-a promising approach to know what is made and what should be made

Yamaguchi
1
,
Okuno2
Proceedings of 1998 Asia and South Pacific Design Automation Conference
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Inverse modeling-a promising approach to know what is made and what should be made

Yamaguchi
1
,
Okuno2
Proceedings of 1998 Asia and South Pacific Design Automation Conference
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Is there experimental evidence for a difference between surface and bulk impact ionization in silicon?

Jungemann
1
,
Yamaguchi2,
Okuno3
International Electron Devices Meeting. Technical Digest
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Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors

Meinerzhagent1,
Jungemann2,
Decker3
et al.
Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications
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