Accurate negative bias temperature instability lifetime prediction based on hole injection

Teramoto, Akinobu; Kuroda, Rihito; Sugawa, Shigetoshi; Ohmi, Tadahiro

doi:10.1016/j.microrel.2008.07.062

Cited by 6 publications

(7 citation statements)

References 37 publications

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“…8, the recovery rates of (A) and (B) after 10 -4 sec after the stress are almost the same. This supports that the degradation mechanism in high injection region is almost the same as that in the conventional high gate voltage stress (36)(37)(38). We have also reported that the excess traps are occupied by excess gate voltage (36)(37)(38), and then the degradation mechanism is changed.…”

Section: Methodssupporting

confidence: 77%

“…We reported that there are two stress conditions in the hole injection stress such as high and low injection regions as shown in Fig. 11, and the degradation mechanism in high injection region is almost the same as that in the conventional high gate voltage stress (36)(37)(38). In this experiment, J inj of 1.8x10 -1 A/cm 2 (B), and 5.2x10 -2 A/cm 2 (C) are the high and low injection regions, respectively.…”

Section: Methodsmentioning

confidence: 94%

“…Where, V G , C ox , D it , -6 F/cm 2 ), the interface trap density (1.0x10 11 cm -2 ), the mobility reduction parameter by the interface traps (1.55x10 -9 cm 2 ), and a mobility reduction parameter by the positive charges (3.79x10 -12 cm 2 ), respectively in measured MOSFETs (37,38) th -stress time D measurement as shown in Fig.7. and from 1.3 to 0.8 % for the hole injection stresses of 1.8x10 -1 and 5.2x10 -2 A/cm 2 , respectively.…”

Section: Methodsmentioning

confidence: 99%

“…It means the degradation mechanism might be different between the evaluation condition and operation condition. Then, we have reported that the cold hole injection method is suitable for discussing the NBTI mechanism that dominates the degradations in operation conditions rather than the conventional stress method that employ higher gate voltage and higher temperature than the operating condition (36)(37)(38) However, these experiments of the cold hole injection stress method have not employed the On-the-Fly measurement. In this paper, we demonstrate the drain current (I D ) and the threshold voltage (V th ) degradation and recovery characteristics caused by the NBT stress employing the cold hole injection stress with On-the-Fly measurement, and then these characteristics are compared with that of the conventional stress method.…”

Section: Introductionmentioning

confidence: 99%

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Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SIO2 Films by On-The-Fly Measurement

Teramoto

Kuroda²,

Suko

et al. 2009

ECS Trans.

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We demonstrate the Negative Bias Temperature Instability (NBTI) characteristics induced by the conventional high voltage and the hole injection stresses using an On-the-Fly measurement technique. In the case of the conventional stress, the recovery rate just after the stress (<30 sec) is much larger than that of the hole injection stress in which stress gate bias voltage is same as the operation condition. Then the recovery rate of conventional stress becomes same as that of the high hole injection stress but it is still larger than that of the low hole injection stress. It is considered that the conventional stress causes the excess trap occupation and the different degradation from the operation condition. The low hole injection under the same gate voltage as the operation condition causes the same degradation and recovery mechanisms as operation condition. An accurate NBTI lifetime prediction based on the gate voltage acceleration stress is very difficult especially when using the On-the-Fly characterization method.

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Section: Methodssupporting

confidence: 77%

Section: Methodsmentioning

confidence: 94%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SIO2 Films by On-The-Fly Measurement

Teramoto

Kuroda²,

Suko

et al. 2009

ECS Trans.

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“…However, it is known that nitrogen atoms in SiON films induce the degradation of the negative bias temperature instability (NBTI) in p-channel MOSFET by two means of hole-trap generation. 4,[9][10][11][12][13] One is a hole-assisted fieldenhanced and thermally activated Si-H bond breaking at the Si-SiON interface. The other is the hole trapping at Si dangling bonds of twofold coordinate Si-N bonding sites in the SiON film.…”

Section: Introductionmentioning

confidence: 99%

Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation

Murakawa

Ishizuka

Nakanishi

et al. 2010

Jpn. J. Appl. Phys.

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Angle-resolved photoelectron spectroscopy study was performed on the depth profile of nitrogen atoms in silicon oxynitride (SiON) films formed by the plasma nitridation of silicon dioxide using low-electron-temperature microwave plasma. The depth profile of nitrogen near the SiON surface was confirmed to increase and its peak position moves into SiON films with an increase in the nitridation time, which improves boron immunity. A new transport and reaction model of plasma nitridation is proposed to explain the time evolution of nitrogen concentration and its depth profile in the films. Here, the density of radical nitrogen atoms decreases exponentially with an increase in the distance from the surface, and the nitrogen concentration incorporated in the SiON film is approximately proportional to the logarithmic time of plasma nitridation. It was newly found that post-nitridation annealing strongly enhances the pile-up of nitrogen atoms at the Si–SiON interface owing to their diffusion from the inward tail of the nitrogen depth profile near the surface. It is deduced that the pile-up of nitrogen atoms induces Si–H bonds at the interface, which become the main trigger for the degradation of the negative bias temperature instability of p-channel metal–oxide–silicon transistors.

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Thermal Aware Device Design Using Hotspot Analysis

Kumar¹,

Senthilrani

2021

Advances in Automation, Signal Processing, Instrumentation, and Control

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Accurate negative bias temperature instability lifetime prediction based on hole injection

Cited by 6 publications

References 37 publications

Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SIO2 Films by On-The-Fly Measurement

Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SIO2 Films by On-The-Fly Measurement

Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation

Thermal Aware Device Design Using Hotspot Analysis

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