Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

Kanegae, Kazutaka; Horita, Masahiro; Kimoto, Tsunenobu; Suda, Jun

doi:10.7567/apex.11.071002

Cited by 26 publications

(22 citation statements)

References 28 publications

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“…As shown, one electrically active level is found at

E_{normalV} + 0.85 eV

, with a capture cross section of

5 \times 10^{- 15} {cm}^{2}

. This level is known as H1, and its concentration is

1 \times 10^{14} {cm}^{- 3}

, as obtained using the method by Kanagae et al In the following, this method will be applied to H1 only.…”

Section: Resultsmentioning

confidence: 96%

“…It was shown that one minority carrier trap is present in the as‐grown material at 0.8 eV above the valence band edge (

E_{normalV}

), labeled H1. As it was shown that H1 concentration decreases with the carbon content of the epilayers, its nature has been associated with the carbon substitutional (

{normalC}_{normalN}

) and its concentration was accurately estimated by Kanagae et al Besides H1, another trap labeled H3 was also found at

E_{normalV} + 0.25 eV

, but no hypothesis on the nature of this trap has been put forward. Coming to the case of particle‐irradiated GaN, if we exclude one study on electron‐irradiated GaN or on proton‐irradiated GaN, nothing is known on the presence of minority carrier traps in implanted material.…”

Section: Introductionmentioning

confidence: 99%

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Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN

Alfieri

Sundaramoorthy

2019

Physica Status Solidi (b)

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Ion implantation is a key step for device processing. This is required for anode/cathode or junction termination extension formation, which relies on the use of multiple‐energy implantation profiles (box profile). However, electrically active defects are known to arise after implantation, especially in the implant‐tail region. Although there are studies on majority carrier traps in implanted GaN, not much is known on minority carrier traps. For this reason, the electrical characterization of minority carrier levels is conducted in ion‐implanted n‐type GaN. Three electrically active levels are found in the 0.18–1.2 eV energy range, above the valence band edge, and their nature is discussed in the light of theoretical studies found in the literature.

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“…As shown, one electrically active level is found at

E_{normalV} + 0.85 eV

, with a capture cross section of

5 \times 10^{- 15} {cm}^{2}

. This level is known as H1, and its concentration is

1 \times 10^{14} {cm}^{- 3}

, as obtained using the method by Kanagae et al In the following, this method will be applied to H1 only.…”

Section: Resultsmentioning

confidence: 96%

“…It was shown that one minority carrier trap is present in the as‐grown material at 0.8 eV above the valence band edge (

E_{normalV}

), labeled H1. As it was shown that H1 concentration decreases with the carbon content of the epilayers, its nature has been associated with the carbon substitutional (

{normalC}_{normalN}

) and its concentration was accurately estimated by Kanagae et al Besides H1, another trap labeled H3 was also found at

E_{normalV} + 0.25 eV

Section: Introductionmentioning

confidence: 99%

Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN

Alfieri

Sundaramoorthy

2019

Physica Status Solidi (b)

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“…For the trap parameters, the energy level below the conduction band and the capture cross section were fixed at 0.6 eV and 5.0 × 10 −15 cm 2 for all GaN layers and the substrate, respectively [36]. Approximately 0.6 eV for the trap's energy level is a common value for the experimental results and is observed for the GaN grown on not only SiC but also GaN substrates [8,9,27,[36][37][38][39][40]. The trap concentration of the channel layer was fixed to be at as low as 1.0 × 10 15 cm −3 [37].…”

Section: Device Structures Of Gan Hemts On Gan Substratesmentioning

confidence: 99%

A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

Oishi

Ito

2021

J Comput Electron

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GaN substrates are promising candidates for GaN high electron mobility transistors (HEMTs) due to their epitaxial layer growth with a low defect density. In this study, technology computer-aided design simulations were executed to design the GaN HEMTs on semi-insulating GaN substrates with thin channel layers. Traps in the GaN substrates played a role in suppressing drain-leakage currents, although degrading transient responses changed the bias from off to on-state for the 0.02-μm thin channel layer. A trade-off relationship between the drain-leakage current and transient response is occurred by changing the trap concentration in the GaN substrates. The AlGaN back-barrier structure has been found to be highly effective in suppressing the drain-leakage current in low-trap-concentration GaN substrates. The trade-off relationship improved by adopting the back-barrier layers, and the maximum drain current decreased. The drain-current reduction compensated by increasing the Al content in the barriers without degrading the trade-off relationship. Therefore, for GaN HEMTs that have low-trap-concentration GaN substrates combined with the back-barrier layer, a high-Al-content barrier have characteristics that are favorable for the trade-off relationship in the case of thin channel layers. Moreover, the traps in GaN substrates were found to affect low-frequency S21, which is important for linearity of the power amplifier, as critically as the transient responses.

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“…Several studies of MOCVD GaN homoepitaxy have shown low carbon concentrations at mid‐ to low‐10 15 cm −3 according to secondary ion mass spectroscopy (SIMS). [ 24–27 ] Despite tremendous efforts on suppressing C incorporation by tuning growth conditions, such as V/III ratio, growth temperature, and growth pressure, [ 22,24,28–30 ] lowering C concentration while maintaining a fast growth rate remains challenging.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Zhang

Chen

et al. 2021

Physica Status Solidi (a)

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The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high‐power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h−1 is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH4 flow, an electron concentration as low as 4 × 1015 cm−3 in n−‐GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h−1. Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 × 1016 cm−3. GaN growth on Mn‐doped semi‐insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm2 V−1 s−1 as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.

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Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

Cited by 26 publications

References 28 publications

Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN

Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN

A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

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