Accurate measurement of the relative Si(Li) detector efficiency for X-ray energies below 5 keV

Orlić, I.; Lenglet, W.J.M.; Vis, R.D.

doi:10.1016/0168-9002(89)90633-5

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…Unfortunately many manufacturers do not specify the thickness of this layer, but on the other hand, the range of thicknesses which can be considered as realistic in modern instruments is not very large. The corresponding thickness generally can be assumed as being approximately between 15 and 25 nm (see, e.g., [5,15,16,26]), thus serving as more or less known input parameter for the fitting procedure.…”

Section: Evaluation Of the Experimental Findingsmentioning

confidence: 99%

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A Method for Determining Detector Efficiencies In-Situ by Variation of the Radiation Incidence Angle

Wernisch

Schönthaler

August

1990

phys. stat. sol. (a)

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The method of semiconductor detector calibration by variation of the radiation incidence angle is discussed in detail and further developed with regard to the use of particle or radiation beam excited samples as radiation sources. Special aspects introduced by this generalization of the theory, such as geometrical considerations or the choice of appropriate instrumental settings, are discussed in detail to provide the user with a comprehensive and ready-to-use theory of this method. The model described combines the advantages of the method of radiation incidence angle variation, viz., that neither a reference detector nor calibrated radiation standards are needed, with those offered by the possibility to use radiation usually generated in the instrument, e.g. electron impact caused radiation in an electron microprobe, for the determination of the detector efficiency. Die Methode der Variation des Einfallswinkels der Strahlung zur Ermittlung der Detektoreffizienz wird eingehend besprochen und hinsichtlich der Verwendung von Proben, die durch TeilchenbeschuD oder Primarstrahlung zur Strahlungsemission angeregt werden, als Strahlungsquellen weiterentwickelt. Spezielle Aspekte, die sich aus dieser Verallgemeinerung der Theorie ergeben, wie etwa Uberlegungen zur Geometrie oder zur Wahl entsprechender Anregungsbedingungen, werden im Detail besprochen, woraus sich eine umfassende und anwenderorientierte Theorie ergibt. Das beschriebene Modell vereinigt die Vorteile der Methode der Einfallswinkelvariation, d. h. daD weder ein Referenzdetektor noch geeichte Strahlungsquellen benotigt werden, mit jenen, die sich aus der Moglichkeit ergeben, als Strahlung fur die Bestimmung der Detektoreffizienz die iiblicherweise in einem Gerat entstehende Strahlung, etwa durch ElektronenbeschulJ entstehende Rontgenstrahlung in einem Elektronenstrahlmikroanalysegerat, zu verwenden.

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Section: Evaluation Of the Experimental Findingsmentioning

confidence: 99%

“…It should also be mentioned that, as a relatively new development in detector efficiency investigations, also Monte Carlo methods have been applied [16,27].…”

Section: Introductionmentioning

confidence: 99%

A Method for Determining Detector Efficiencies In-Situ by Variation of the Radiation Incidence Angle

Wernisch

Schönthaler

August

1990

phys. stat. sol. (a)

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Silicon Avalanche Detectors for X-Ray Analysis

Sueva

Spassov

Chikov

et al. 1990

phys. stat. sol. (a)

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Corrections to the conventional approach to Si(Li) detector efficiency

O’Meara

Campbell

2004

X-Ray Spectrometry

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The contribution to full‐energy peak intensity from coherent or Compton scatter interactions followed by photoelectric absorption was calculated by the Monte Carlo method and found to be significant for photon energies above 30 keV. A multiple‐event term was therefore incorporated in the conventional physical model of detector efficiency. Also, a widely used approximation in the model was made rigorous, thereby removing a source of error. Efficiency measurements with and without an external collimator suggested the need for a further additional term, this one describing incomplete collimation by the internal aperture structure. Measured efficiency curves were least‐squares fitted using the conventional model with and without these corrections and new terms. The deduced detector thickness agreed with the manufacturer's value only when the new terms were used. Copyright © 2004 John Wiley & Sons, Ltd.

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Accurate measurement of the relative Si(Li) detector efficiency for X-ray energies below 5 keV

Cited by 9 publications

References 16 publications

A Method for Determining Detector Efficiencies In-Situ by Variation of the Radiation Incidence Angle

A Method for Determining Detector Efficiencies In-Situ by Variation of the Radiation Incidence Angle

Silicon Avalanche Detectors for X-Ray Analysis

Corrections to the conventional approach to Si(Li) detector efficiency

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