Accurate measurement of electro-optic coefficients of undoped and MgO-doped stoichiometric LiNbO_3

Nakano, Shota; Akiyama, Kazuki; Shoji, Ichiro

doi:10.1364/ome.7.000939

Cited by 11 publications

(2 citation statements)

References 7 publications

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“…Reported Pockels coefficient ( r 13 and r 33 ) and their cutoff wavelengths for different materials: LiNbO 3 , − GaN, GaN/AlGaN MQWs, , AlN, − and AlGaN/AlN MQWs (our study). The error bar shows the spectral dependence of the EO coefficient.…”

Section: Introductionmentioning

confidence: 97%

Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells

et al. 2022

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AlN-on-sapphire is a promising integrated photonic platform for operation over a wide wavelength range from ultraviolet to infrared. However, this platform suffers from a weak second-order electro-optic effect, also known as the Pockels effect. Here, we demonstrate an enhanced Pockels effect by utilizing AlGaN/AlN multiple quantum wells (MQWs) regrown on the AlN layer. This enhancement is attributed to the large built-in polarization field in the MQWs, which results in a higher second-order susceptibility in the MQW layer due to the electric-field-induced second-order effect overlapping with the optical mode of the waveguiding device. To investigate this enhancement, we design and fabricate separate AlN microring resonator modulators (MRMs) with MQWs operating at two different wavelengths, 1550 and 780 nm. The resonance shift due to the Pockels effect is characterized by applied voltages and compared with the AlN MRM of similar dimensions but without MQWs. We observe enhanced resonance shift factors of 2.16 (at 1550 nm) and 1.56 (at 780 nm) for resonators with MQWs compared to those without MQWs. Through a modal overlap analysis between the MQW layers and the optical mode of the resonator, we extract the second-order susceptibility in the MQW regions, which is shown to be 20 (at 1550 nm) and 10 times (at 780 nm) higher compared to that of AlN. Our study paves a promising path for realizing III-nitride-integrated photonic modulators with a stronger Pockels effect by employing MQWs with an optimal overlap with the optical mode of the modulator.

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Section: Introductionmentioning

confidence: 97%

Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells

et al. 2022

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“…The major measurement method reported previously is based on the Mach-Zehnder interferometry. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] The method is only valid for the measurement of a bulk material. Here, we propose a novel method to measure the EO coefficient.…”

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confidence: 99%

Communication—Electro-Optic Coefficient Measurement by Using Linearity between Refractive Index Change and Externally Applied Electric Field

Sun

Shao

Wong

et al. 2020

ECS J. Solid State Sci. Technol.

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We propose a method to measure electro-optic(EO) coefficient of either a bulk crystal or a thin-film or a planar/slab waveguide by using the linearity between refractive index change induced by EO effect and externally applied electric field. A LiNbO 3 singlecrystal is exemplified. By using prism coupling technique the EO-effect-induced refractive index change at crystal surface was measured vs electric field. By using their linearity the EO coefficient is determined. A comparison with previously reported values shows that the measured data can be considered as identical to the reported within the error, confirming feasibility of the method. The accuracy is ∼7%.

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Experimental verification of electro-optical effect in LBO crystal based on nonlinear optical process

Han

Zhan

Zhang

et al. 2022

Optik

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Accurate measurement of electro-optic coefficients of undoped and MgO-doped stoichiometric LiNbO_3

Cited by 11 publications

References 7 publications

Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells

Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells

Communication—Electro-Optic Coefficient Measurement by Using Linearity between Refractive Index Change and Externally Applied Electric Field

Experimental verification of electro-optical effect in LBO crystal based on nonlinear optical process

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