Accurate extraction of the diffusion current in silicon p-n junction diodes

Abstract

An accurate method for the extraction of the reverse diffusion current component in a silicon p-n junction diode is proposed. It combines capacitance–voltage and current–voltage measurements on an array of diodes with different geometry in order to separate the peripheral and the volume leakage current components. The corrected volume capacitance is then used to calculate the depletion width as a function of the reverse bias. Extrapolation of the reverse current to zero depletion width results in the diffusion current part, both for the volume and for the peripheral component. From the temperature dependence, a thermal activation energy of 1.12 eV is obtained. The volume diffusion current density of the p-type Czochralski wafers studied, shows a pronounced substrate dependence, while the peripheral diffusion current density is constant. Finally, the implications for the extraction of the effective bulk recombination lifetime are discussed.

Large Work Function Modulation of Monolayer MoS2 by Ambient Gases

“…Although this value could be obscured by the large beam size (∼500 nm), Gaussian distribution of the focused beam still provided a discernible width. This value is much smaller than the few micrometers typically observed in bulk p–n junction semiconductors or electrostatic p–n junctions. , Whether the small depletion layer width originates from the monolayer nature of 2D materials or junction character controlled by environmental gases is not clear now and requires further study. The photocurrent near the metal contact is higher than that in the middle region, which is attributed to the reduced recombination rate of photogenerated carriers by the shortened diffusion length.…”

Characterization of Bulk Damage in CMOS MAPS With Deep N-Well Collecting Electrode

“…This could actually be correlated with the detected decrease in charge collection efficiency (see Section III-B), to be ascribed, as already mentioned, to a reduction in the recombination lifetime. However, the limited set of available test structures makes it difficult to perform an accurate extraction of the diffusion component [22]. The curves in Fig.…”

Effects of Interface States on Ge-On-SOI Photodiodes

“…1) I diff is caused by thermally generated minority carriers, which are initially located inside the quasi-neutral regions, diffusing across the junction to maintain charge neutrality. In diffusion-limited diodes, the ideality factor under forward bias is n diff = 1 [30], and the activation energy under reverse bias is E a-diff = E g [31]. 2) For the SRH process-limited current, the ideality factor under forward bias is…”