Accurate Determination of the Series Resistance of mm-Wave Schottky-Diodes

Jelenski, A.; Kollberg, E.; Schneider, M.V.; Zirath, Herbert

doi:10.1109/euma.1985.333493

Cited by 9 publications

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“…The concentration of the second and the third donor levels N 2 and N 3 of the segments (2) and (3) and their bottom conduction band E c positions are respectively about 1.11 × 10 15 cm −3 and 5.25 × 10 15 cm −3 and also E c − E 2 = 0.76 eV and E c − E 3 = 1.02 eV. These quantities are calculated from the development of relations (11) and (12). The second and the third donor levels are located above the Fermi level E FS in the depletion zone.…”

Section: Resultsmentioning

confidence: 99%

“…Note that for low current, the bias voltage V G can be considered to be equal to the voltage V applied to the InP semiconductor depletion zone layer surface, because the InSb presents a very thin thickness and a low bandgap level (0.17 eV) compared to InP. In this particular case, one can consider only the influence of the interfacial density of states N ss on the real I (V ) characteristic [12]. When the current increases, this consideration is not possible and one must take into account the voltage drop of the serial resistance R s and interfacial layer voltage V i .…”

Section: Resultsmentioning

confidence: 99%

“…We must, then, analyse the second and the third segments (2, 3) using the Balberg model [11] to determine the concentration of the three donor levels and their position relative to the conduction band edge E c . Substituting a value for the mean interfacial density of states N ss of 4.33×10 12 eV −1 cm −2 in expression (9) we can determine that the value of α is equal to 0.69. Taking the slope of the first segment (1) (see figure 7), and the intersection with the voltage axis, and using equations ( 8) and (10), the N 1 = N d concentration and the diffusion potential V d can be evaluated and are found to be equal to 3 × 10 15 cm −3 and 0.337 V respectively.…”

Section: Resultsmentioning

confidence: 99%

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Electrical study of the Au/InSb/InP system

Akkal

Benamara

Bideux

et al. 1999

Semicond. Sci. Technol.

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In this work, we have studied the dominant transport mechanism in an Au/InSb/InP diode. The InP (n) substrate is restructured with some monolayers of an InSb thin film. The structures have been characterized electrically and the C(V ) and I (V ) curves have been plotted. The saturation current I s , the serial resistance R s and the mean ideality factor n were calculated using the I (V ) characteristics and are respectively equal to 2.05 × 10 −5 A, 85 and 1.7. Thus, the doping level N d and diffusion voltage V d were deduced from the C(V ) curves and are evaluated to N d = 3 × 10 15 cm −3 and V d = 0.337 V.The analysis of I (V ) and C(V ) characteristics allows us to determine that the mean interfacial density of states N ss and the transmission coefficient θ n are respectively equal to 4.33 × 10 12 cm −2 eV −1 and 4.08 × 10 −3 .The presence of deep discrete donor levels in the semiconductor bulk and/or the distributed density of states N ss is responsible for the nonlinearity of the C −2 (V ) characteristic because the C(V ) curve is controlled by two donor levels located at 0.76 eV and 1.02 eV relative to the conduction band edge E c .

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%