Accurate design of HBT VCOs with flicker noise up-conversion minimization, using an advanced low-frequency cyclostationary noise model

Gourdon, Christophe; Nallatamby, Jean-Christophe; Baglieri, D.; Prigent, Michel; Camiade, M.; Obregon, J.

doi:10.1109/mwsym.2005.1516984

Cited by 4 publications

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In summary, we extracted the LF noise model of the HBT with internal noise sources. This model was implemented in ADS [15] and will enable us to simulate the phase noise of the oscillator while taking into account the cyclostationary property of noise sources.…”

Section: Modeling Of Transistor Low-frequency Noise Sourcesmentioning

confidence: 99%

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

Laurent

Nallatamby

Prigent

et al. 2012

Active and Passive Electronic Components

Self Cite

View full text Add to dashboard Cite

This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured.

show abstract

Section: Modeling Of Transistor Low-frequency Noise Sourcesmentioning

confidence: 99%

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

Laurent

Nallatamby

Prigent

et al. 2012

Active and Passive Electronic Components

Self Cite

View full text Add to dashboard Cite

show abstract

A wideband MMIC oscillator in S-band with 2 switched GaAs HBT VCOs for spatial applications

Chamaa¹,

Prigent²,

Nallatamby³

et al. 2011

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

View full text Add to dashboard Cite

International audienceIn this paper, we present the design of a MMIC circuit, which contains two switched VCOs based on the Clapp topology using a UMS GaInP/GaAs HBT technology. This achieves more than 30% of tuning range around 3.2 GHz, a phase noise of -95 dBc/Hz at 100 KHz offset frequency from the carrier and a power consumption of 150 mW. A DC switch based on HBT was used in order to switch between the 2 VCOs

show abstract

A chip set of low phase noise MMIC VCOs at C, X and Ku band in InGaP-GaAs HBT technology for satellite telecommunications

Florian

D'Angelo²,

Resca³

et al. 2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

View full text Add to dashboard Cite

Accurate design of HBT VCOs with flicker noise up-conversion minimization, using an advanced low-frequency cyclostationary noise model

Cited by 4 publications

References 3 publications

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

A wideband MMIC oscillator in S-band with 2 switched GaAs HBT VCOs for spatial applications

A chip set of low phase noise MMIC VCOs at C, X and Ku band in InGaP-GaAs HBT technology for satellite telecommunications

Contact Info

Product

Resources

About