Accurate Calculation of Junction Temperature of HBTs

Darwish, Ali; Hung, H. Alfred; Bayba, Andrew J.; El-Kinawi, Khaled

doi:10.1109/tmtt.2010.2103231

Cited by 6 publications

(9 citation statements)

References 17 publications

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“…The method can be used to calculate self-heating for other geometries, numbers and locations of emitter fingers and transistors, and allows the geometry scalable generation of self-heating networks within seconds (in contrast to, e.g., 3-D FEM methods [3]). The complete methodology is expected to be also applicable to other calculation methods (see [14], [15]), architectures (DTI [28]), transistor types (FET, HEMT), and material systems (InP-HBTs).…”

Section: Discussionmentioning

confidence: 99%

“…An alternative approach using a resistive network is presented in [14], whereas in [15], only a single equivalent thermal resistance is determined, which shows a small-signal solution for an SOI technology. Most aforementioned approaches rely on externally accessible thermal nodes in the electrical device model for realizing a thermal subcircuit.…”

Section: Modeling Approachmentioning

confidence: 99%

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Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

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A strategy for compact modeling the static thermal coupling between the emitter fingers of SiGe heterojunction bipolar transistors (SiGe-HBTs) is described. An extraction methodology that includes the nonlinear temperature dependence of the thermal conductivity is introduced and applied to suitable test structures. The experimental results are used for calibrating a 3-D numerical solution of the equation for heat conduction based on a Green's function approach. The latter can then be employed for generating thermal coupling networks for arbitrary transistor configurations.

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Section: Discussionmentioning

confidence: 99%

Section: Modeling Approachmentioning

confidence: 99%

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

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“…4 shows the calculated/simulated R thc values of the two-finger devices for various dimensions (W e , L e , and s). Substrate height (H ) and thermal conductivity (k) with the fixed values of 100 μm and 45 W/K · m were used for calculation [7]. Since the device has two fingers, the R thc values of both the fingers are identical (R th(12) = R th(21) ).…”

Section: A Analytical Validation In Feol Levelmentioning

confidence: 99%

“…Prior to measurement, it should be considered that the real HBT devices exhibit a temperature dependence on thermal conductivity (k) in FEOL and inevitably include metal interconnections in BEOL [7], [11]. Since these effects make R th -change, Fig.…”

Section: B Experimental Validation In Feol and Beol Levelsmentioning

confidence: 99%

“…To design a watt-level PA in a compact layout, however, the multifinger devices are essential, and thus, the thermally coupled effects between each finger of a device should be considered in R th modeling. Even though several extraction methods for multifinger device have been reported [7], [8], however, they are applicable just for specific cases, such as the hottest finger only or trench-isolated transistor. Instead, analytic methods presenting a closed-form expression have been employed for R th -calculation [9], [10].…”

Section: Introductionmentioning

confidence: 99%

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A Simple Extraction Method of Thermal Resistance in Multifinger GaAs HBT

Goh

Kim

Jeon

et al. 2016

IEEE Trans. Electron Devices

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A novel extraction method to estimate the thermal resistance (R th ) of a multifinger GaAs heterojunction bipolar transistor (HBT) device is presented based on the simplified Fourier's law. By calculating the thermal coupling resistance between the fingers on top of the self-heating thermal resistance, the values of R th of multifinger devices for various dimensions are accurately calculated while maintaining the simplicity of calculation. To verify the idea, the proposed method is compared with the measurement-based method as well as the analytic methods, such as the finite-element method and the solution of 3-D Laplace's equation. For four-finger HBT devices, the extracted R th results showed good agreements with the analytic methods within an error of 9% and the measurement-based results with a deviation of 7.4%, thus convincing the usefulness of the proposed method.

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