Accuracy of nonoscillating one-port noise measurements

Pantoja, José Miguel Miranda; Grüb, A.; Krozer, Viktor; Franco, Jose Luis Sebastian

doi:10.1109/19.392870

Cited by 4 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The experimental setup for the noise measurements has been described elsewhere [7]. In order to simulate the expected noise performance of the diodes, the model proposed in [5] was used.…”

Section: Measurements and Discussionmentioning

confidence: 99%

Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces

Miranda

Lin²,

Brandt³

et al. 2000

IEEE Electron Device Lett.

View full text Add to dashboard Cite

This work presents a systematic investigation of the influence of reactive ion etching (RIE) on the microwave noise performance of GaAs Schottky diodes. A number of devices has been fabricated by making use of RIE techniques in the anode window definition. The noise temperature measurements have revealed a strong degradation of the noise performance with RIE time, but no significant changes have been observed on the barrier height. Different refinements to the fabrication process that are typically utilized to reduce the effects of RIE damage were tested. The use of thermal treatment at 400 C after the RIE process was found to be the most effective procedure to remove the sources of the measured excess noise, which are attributed to anomalies in the Ga coverage at the metal-semiconductor interface.Index Terms-Noise measurement, Schottky diodes, semiconductor device noise.

show abstract

“…The experimental setup for the noise measurements has been described elsewhere [7]. In order to simulate the expected noise performance of the diodes, the model proposed in [5] was used.…”

Section: Measurements and Discussionmentioning

confidence: 99%

Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces

Miranda

Lin²,

Brandt³

et al. 2000

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…The noise standard used in the measurements is a solid state source coupled to the system at both cold and hot states with equivalent temperatures equal to the room temperature and 1200 K, respectively. This setup enables us to calculate simultaneously the noise temperature and the amplitude of the reflection coefficient at the sample reference plane according to the procedure described in [15], except that in the measurements presented in this work a reactive coupling is used to match the sample to the system. The measured reflection coefficient exhibited a negligible variation with the bias current, and therefore the coupling made when no bias is applied is also valid at all the bias points.…”

mentioning

confidence: 99%

Microwave noise measurements on /GaAs channels grown by molecular beam epitaxy using and

Miranda

Vogt

Schüßler

et al. 1998

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Al 0.3 Ga 0.7 As/GaAs layers have been grown with beams of As 2 and As 4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good dc performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As 2 to be considerably noisier than the one grown with As 4 .

show abstract

Two-port noise and impedance measurements for two-terminal devices with a resonant tunneling diode example

Przadka

Webb

Janes

1998

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Accuracy of nonoscillating one-port noise measurements

Cited by 4 publications

References 6 publications

Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces

Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces

Microwave noise measurements on /GaAs channels grown by molecular beam epitaxy using and

Two-port noise and impedance measurements for two-terminal devices with a resonant tunneling diode example

Contact Info

Product

Resources

About