Accumulation and directionality of large spontaneous emission enabled by epsilon-near-zero film

Duan, Xuening; Zhang, Fan; Qian, Zhiyuan; He, Hao; Shan, Li; Gong, Qihuang; Gu, Ying

doi:10.1364/oe.27.007426

Cited by 12 publications

(5 citation statements)

References 43 publications

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“…These materials have been utilized in beam shaping and steering [19,20], subwavelength tunnelling [21,22] and enhanced nonlinear interactions [23]. Only recently, ENZ materials were used as substrates to control the LSPR of plasmonic antennas [24][25][26][27], revealing their great potential for plasmon-ENZ systems. However, only transparent conductive oxides, such as indium tin oxide and aluminium-doped zinc oxide, are used in these studies.…”

Section: Introductionmentioning

confidence: 99%

Controlling the plasmon resonance via epsilon-near-zero multilayer metamaterials

et al. 2020

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Localized plasmon resonance of a metal nanoantenna is determined by its size, shape and environment. Here, we diminish the size dependence by using multilayer metamaterials as epsilon-near-zero (ENZ) substrates. By means of the vanishing index of the substrate, we show that the spectral position of the plasmonic resonance becomes less sensitive to the characteristics of the plasmonic nanostructure and is controlled mostly by the substrate, and hence, it is pinned at a fixed narrow spectral range near the ENZ wavelength. Moreover, this plasmon wavelength can be adjusted by tuning the ENZ region of the substrate, for the same size nanodisk (ND) array. We also show that the difference in the phase of the scattered field by different size NDs at a certain distance is reduced when the substrate is changed to ENZ metamaterial. This provides effective control of the phase contribution of each nanostructure. Our results could be utilized to manipulate the resonance for advanced metasurfaces and plasmonic applications, especially when precise control of the plasmon resonance is required in flat optics designs. In addition, the pinning wavelength can be tuned optically, electrically and thermally by introducing active layers inside the hyperbolic metamaterial.

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Section: Introductionmentioning

confidence: 99%

Controlling the plasmon resonance via epsilon-near-zero multilayer metamaterials

et al. 2020

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“…This effect has been reported in the literature as the LSPR pinning. [ 7,17,49–53 ] This phenomenon is not observed for sample A because its spacer layer is non‐intentionally doped, thus its free carrier concentration lies around 1 × 10 16 cm −3 , corresponding to a plasma frequency in the THz region according to Equation (); therefore, the probed infrared spectral region is too far from its spacer ENZ regime to observe the LSPR pinning. One must keep in mind that fabricated antennas width, on samples B and C, range from few hundreds of nm up to nearly 2 µm, as opposed to sample A for which antennas of width greater than ≈600 nm have LSPR frequencies out of the MCT detector limit (≈500 cm −1 or 20 µm).…”

Section: Resultsmentioning

confidence: 99%

Engineering the Infrared Optical Response of Plasmonic Structures with ϵ‐Near‐Zero III‐V Semiconductors

Fehlen,

Guise,

Thomas

et al. 2023

Advanced Optical Materials

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The pursuit for enhanced light‐matter interactions using ever more suitable plasmonic materials has led to the development of novel bulk materials, such as ϵ‐near‐zero (ENZ) media. The ability to control the free carrier density gives semiconductors a significant advantage over traditionally used noble metals and phonon‐based materials as ENZ media for infrared applications. A metal‐ENZ‐metal structure is designed of epitaxially‐grown III‐V semiconductors and patterned into nanoantennas by electron‐beam lithography (from 200 up to 1800 nm) and demonstrates plasmonic resonances tuned from the terahertz up to the near‐infrared, according to the ENZ doping level (1 × 1016, 1 × 1019, and 2 × 1019 cm‐3). Experimental results, corroborated by numerical simulations, show that the designed metal‐ENZ‐metal structure is a promising vehicle to provide additional insights regarding ENZ‐based phenomena including the resonance pinning, the near‐constant phase, and the dispersive nature of ENZ materials. It is believed that III‐V semiconductors within a metal‐ENZ‐metal structure address the problem of weak light‐matter interactions and shall greatly benefit infrared applications, e.g., sensing and communication, as they can be engineered to take advantage of both plasmon and ENZ effects and integrated onto modern photonics devices.

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“…While when the refractive index n is not 1, the nR/λ will be the above values when resonant. Different to plasmonic particles embedded in non-zero index media that usually have only one resonant R/λ value for one mode [26][27][28]43], in the spherical cavity with ZIM background, there are series of R/λ values for each 2 l -TM/TE Mie resonance. As shown in figure 2, when the resonant wavelength is fixed at 630 nm (take an example, also can be at other wavelengths (see supplementary material)), the radiation power (P = these cavities support the same kind of resonance.…”

Section: Nesting and Degeneracy Of Mie Resonancesmentioning

confidence: 99%

Nesting and degeneracy of Mie resonances of dielectric cavities within zero-index materials

Duan¹,

Chen²,

Ma³

et al. 2022

J. Opt.

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Resonances in optical cavities are used to manipulate light propagation, enhance light-matter interaction, modulate quantum states, and so on. However, the index contrast between the traditional cavities and the host is generally not high, which to some extent limited their performances. By putting dielectric cavities into a host of zero-index materials, index contrast in principle can approach infinity. Here, we analytically deduced Mie resonance conditions at this extreme circumstance. Interestingly, we discovered a so-called resonance nesting effect, in which a set of cavities with different radii can possess the same type of resonance at the same wavelength. We also revealed previously unknown degeneracy between the 2l-TM (2l-TE) and 2l+1-TE (2l+1-TM) modes for " 0 ( 0) material, and the 2l-TM and 2l-TE for both " 0 and 0. Such extraordinary resonance nesting and degeneracy provide additional principles to manipulate cavity behaviors.

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Accumulation and directionality of large spontaneous emission enabled by epsilon-near-zero film

Cited by 12 publications

References 43 publications

Controlling the plasmon resonance via epsilon-near-zero multilayer metamaterials

Controlling the plasmon resonance via epsilon-near-zero multilayer metamaterials

Engineering the Infrared Optical Response of Plasmonic Structures with ϵ‐Near‐Zero III‐V Semiconductors

Nesting and degeneracy of Mie resonances of dielectric cavities within zero-index materials

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