Acceptors in wide-gap semimagnetic semiconductors

Abstract

Résumé. -Nous considérons les états accepteurs peu profonds dans les semiconducteurs semimagnétiques de large bande interdite, appartenant au réseau blende de zinc (comme Cd1-xMnxTe). Le

Electron-hole contribution to the apparents−dexchange interaction in III-V dilute magnetic semiconductors

“…A similar reduction factor of the acceptor splitting was obtained previously for a variational wave function. 27 It appeared also in the case of DMS nanocrystals. 28 This value yields −0.28 eV as the contribution of the short-range interaction to N 0 J eh .…”

Bound Exciton Luminescence in Phosphorus Doped Cd1-xMnxTe Crystals

“…At zero field, the binding energy consists of a Coulomb part and an exchange (magnetic polaron) part. The polaron characteristic energy is given by [7] where the factor 0.8 describes the orbital quenching of the spin splitting [8], β is the exchange constant of the valence band, χ = ∂Μ0 /∂Η magnetic susceptibility of Mn ions system, α = ħ 2 K/(m┴e 2 ) is the effective Bohr radius. Because of very large value of β in p-type Cd1-xΜnxTe (β = 0.88 eV [9]) ε p is very high.…”

Growth and Electrical Properties of Phosphorus Doped Zn1-xMnxTe Crystals

“…As it is well established, mutual exchange interaction between Mn and bound hole spins leads to the spin-splitting of the acceptor state increasing its binding energy. The polaron characteristic energy is given by [5] where the factor 0.8 describes the orbital quenching of the spin splitting [6], β is the exchange constant of the valence band, χ = ∂Μ0 /∂Η magnetic susceptibility of Mn ions system, α is the effective Bohr radius. Because of a very large β value in Zn1-xMnxe ( β = 1.09 eV [7]) εp is very high.…”