Acceptors in undoped GaSb; the role of vacancy defects

Kujala, Janne V.; Slotte, Jonatan; Tuomisto, Filip

doi:10.1088/1742-6596/443/1/012042

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…13 During the last decades, positron annihilation spectroscopy (PAS) has been employed for studying the defects in GaSb. [14][15][16][17][18][19][20][21] PAS is a versatile tool for studying point defects in semiconductors. 22 Its power is due to the selective sensitivity to vacancy defects and the insensitivity to conductivity and band gap width.…”

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confidence: 99%

Point defect balance in epitaxial GaSb

Segercrantz

Slotte

Makkonen

et al. 2014

Applied Physics Letters

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Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

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confidence: 99%

Point defect balance in epitaxial GaSb

Segercrantz

Slotte

Makkonen

et al. 2014

Applied Physics Letters

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“…25,26 The cause of the p-type conductivity has been studied using positron annihilation spectroscopy. [27][28][29][30][31][32][33][34][35] Positron annihilation spectroscopy is a non-destructive technique and a powerful method for studying neutral or negative open volume defects in solids. 36 Due to its charge, the positron experiences the absence of a positive nucleus as a potential well.…”

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confidence: 99%

Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects

Segercrantz

Makkonen

Slotte

et al. 2015

Journal of Applied Physics

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The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studied using positron annihilation spectroscopy and ab initio calculations. Doppler broadening measurements have been conducted on samples of GaN x Sb 1Àx layers grown by molecular beam epitaxy, and the results have been compared with calculated first-principle results corresponding to different defect structures. From the calculated data, binding energies for nitrogen-related defects have also been estimated. Based on the results, the increase in residual hole concentration is explained by an increase in the fraction of negative acceptor-type defects in the material. As the band gap decreases with increasing N concentration, the ionization levels of the defects move closer to the valence band. Ga vacancy-type defects are found to act as positron trapping defects in the material, and the ratio of Ga vacancy-type defects to Ga antisites is found to be higher than that of the p-type bulk GaSb substrate. Beside Ga vacancies, the calculated results imply that complexes of a Ga vacancy and nitrogen could be present in the material. V C 2015 AIP Publishing LLC.

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Acceptors in undoped GaSb; the role of vacancy defects

Cited by 2 publications

References 3 publications

Point defect balance in epitaxial GaSb

Point defect balance in epitaxial GaSb

Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects

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