Acceptor Neutralisation by Hydrogen in GaN and Wide Band Gap II-VI Materials

Clerjaud, B.; Côté, D.; Lebkiri, Ahmed

doi:10.1002/(sici)1521-3951(199812)210:2<497::aid-pssb497>3.0.co;2-y

Cited by 8 publications

(2 citation statements)

References 29 publications

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“…There are a number of reviews on the topic. [53][54][55] Zinc selenide (ZnSe) has been investigated for blue laser diode applications with nitrogen (N) the preferred p-type dopant. 56,57 However p-type doping has proved difficult due to the passivation of the dopant atoms with hydrogen.…”

Section: Hydrogen In Semiconductorsmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

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Section: Hydrogen In Semiconductorsmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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“…1) a clear signature of hydrogen bound to phosphorus can be observed: the stretching local vibrational mode (LVM) of phosphorus-hydrogen complex at 2191 cm --1 [6] (the frequency value for this mode is lower by 2 cm --1 than the one quoted in [6] due to the very low resolution we used), indicating unintentional passivation of the dopants with hydrogen during growth. 1) a clear signature of hydrogen bound to phosphorus can be observed: the stretching local vibrational mode (LVM) of phosphorus-hydrogen complex at 2191 cm --1 [6] (the frequency value for this mode is lower by 2 cm --1 than the one quoted in [6] due to the very low resolution we used), indicating unintentional passivation of the dopants with hydrogen during growth.…”

mentioning

confidence: 88%

Lattice Sites of Phosphorus in ZnMnTe - A Compensation Study

Khoi¹,

Kaczor²,

Kowski³

2002

phys. stat. sol. (b)

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In this paper we investigate phosphorus doped ZnMnTe by means of infrared absorption. We report pronounced changes in the absorption spectra upon increasing phosphorus doping and upon annealing at 850 C in nitrogen atmosphere at high pressure. From the far-infrared local vibrational spectra we identify the lattice sites of phosphorus in ZnMnTe and interpret the strong compensation of the as-grown material in terms of at least partial passivation by hydrogen.

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Vibrational Absorption Associated with Hydrogen

Pajot

Clerjaud

2011

Springer Series in Solid-State Sciences

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Acceptor Neutralisation by Hydrogen in GaN and Wide Band Gap II-VI Materials

Cited by 8 publications

References 29 publications

As Doping in (Hg,Cd)Te: An Alternative Point of View

As Doping in (Hg,Cd)Te: An Alternative Point of View

Lattice Sites of Phosphorus in ZnMnTe - A Compensation Study

Vibrational Absorption Associated with Hydrogen

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