Accelerated domain switching speed in single-crystal LiNbO3 thin films

Abstract

By using ionic implantation and wafer bonding technologies, we peeled off a single-crystal LiNbO3 thin film in the atomic-layer smoothness from the surface of a bulk Z-cut LiNbO3 single crystal. X-ray diffraction patterns showed only (00l) orientation of the film. From positive-up-negative–down pulse characterization, we measured domain switching current transients under various short-pulse voltages, where we observed domain switching currents to occur separately at time after initial capacitor charging currents. This is similar to early observations in bulk ferroelectric single crystals, where apparent positive/negative coercive fields of domain switching determined from polarization-electric field hysteresis loops always equal maximum/minimum applied fields. However, after pulse stressing of the film for more than 1000 cycles, the domain switching speed is accelerated, where domain switching current overlaps with the initial capacitor charging current with a well-defined coercive field independent of the applied-field strength. Finally, we simulated the whole domain switching current transients with the assumption of the resistance degradation across interfacial passive layers between the film and electrodes.

Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

“…0.135 [ 46 ] 397 [ 48 ] LiNbO 3 1 × 10 −13 [ 35 ] 5 × 10 −7 [ 42 ] 0.269 [ 44 ] 385 [ 48 ] Figure 2. Ferroelectric polarization switching.…”

“…[ 34,35 ] The τ 0 is estimated to be 1 × 10 −13 s in oxide ferroelectrics, [34][35][36] which is several order shorter than that in many molecular and organic ferroelectrics such as TGS, IM, and PVDF-TrFE. [ 37 ] The T S of most molecular ferroelectrics is much longer than that of most oxide ferroelectrics, [38][39][40][41][42] though the measured T S may depend on the domain wall creep process and varies in a wide range. In comparison, Table 1 also shows the bond energy ( E b ) of adjacent homopolar atoms, and the homopolar atom displacement (Δ z ) between Temp << T C and Temp > T C where Temp is the measured temperature.…”

Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

“…However, according to the current experimental results, we still think the sample thickness is the main factor that affects the domain stability. According to a current-limited switching model that should be applicable to the LN thin film, 27 the +z-cut LN thin film could be treated as a capacitor. The internal field is along the polarization direction in a single domain LNOI.…”

Low frequency piezoresonance defined dynamic control of terahertz wave propagation

“…As described in ref. 35, the top LN layer (of 504 nm) was peeled off from its parent single crystal by using ionic implantation and wafer bonding technique, prior to being implanted on a thin platinum layer (400 nm) using magnetron sputtering. The platinized LN is then bonded onto the parent LN substrate (500 μm) with a plasma-enhanced chemical vapor deposited SiO 2 (1700 nm) layer in between.…”