Abstract:We present a theoretical approach to study the effects of an ac-field applied to quantum dots with semi-spherical symmetry. Using the Floquet formalism for this periodically driven system, the timedependent Hamiltonian in the effective mass approximation is solved. We show that the Hilbert space of solutions is separated into orthogonal subspaces with different z-component of the angular momentum. We give an explicit analytical representation for electronic states as a function of the intensity and frequency o… Show more
“…The electronic properties of this so-called self-assembled quantum lens (SAQL) has been studied previously [5,6]. The study has included the effects of an external electric [7,8] and magnetic field [9]. Some optical properties of such structures have also been analyzed [10].…”
The self-assembled quantum dot with lens domain has rotational symmetry but it is intrinsically asymmetric when the electron moves perpendicularly to its circular base, i.e. along the rotational axis. To characterize this asymmetry, an external electric field is applied along either the positive or negative direction of the rotational axis. We report the different Stark shifts appearing in the spectra as a function of the field intensity for different lens domains. It is shown that for a flat lens domain the asymmetry effects decrease, but even for very flat lenses they can not be approximated by a cylindrical domain. Finally, some optical properties such as the dielectric constant and electroabsorption are studied. Signatures of the energy spectrum reveal in these quantities. The importance of considering the proper lens domain as long as the magnitude and direction field to tune a specific level transition is stressed.
“…The electronic properties of this so-called self-assembled quantum lens (SAQL) has been studied previously [5,6]. The study has included the effects of an external electric [7,8] and magnetic field [9]. Some optical properties of such structures have also been analyzed [10].…”
The self-assembled quantum dot with lens domain has rotational symmetry but it is intrinsically asymmetric when the electron moves perpendicularly to its circular base, i.e. along the rotational axis. To characterize this asymmetry, an external electric field is applied along either the positive or negative direction of the rotational axis. We report the different Stark shifts appearing in the spectra as a function of the field intensity for different lens domains. It is shown that for a flat lens domain the asymmetry effects decrease, but even for very flat lenses they can not be approximated by a cylindrical domain. Finally, some optical properties such as the dielectric constant and electroabsorption are studied. Signatures of the energy spectrum reveal in these quantities. The importance of considering the proper lens domain as long as the magnitude and direction field to tune a specific level transition is stressed.
“…When a negative/positive impurity is inserted, its potential attracts/repels holes, or in opposite form, to the electrons. This causes a redistribution of the carriers, i.e., the effect of the impurities is similar to apply a low electric field [31][32][33].…”
A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected too.
“…It consists of an observable red-shift of an optical transition induced by the presence of a constant external electric field [37][38][39][40]. In recent years, some works have also dealt with ac-electric field [41,42]. Stark effect leads to an energy shift of the exciton photoluminescence as well as a corresponding enhancement of its recombination lifetime [43].…”
We present a theoretical approach, based on the effective mass approximation model, on the quantum-confinement Stark effects for spherical semiconducting quantum dots in the regime of strong confinement of interactive electron-hole pair and limiting weak electric field. The respective roles of Coulomb potential and polarization energy are investigated in details. Under reasonable physical assumptions, analytical calculations can be performed. They show that the Stark shift is a quadratic function of the electric field amplitude in this regime. The computed numerical values obtained from this approach are found to be in good agreement with experimental data over a significant domain of quantum dot sizes.
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