AC longitudinal and contact resistance measurements of quantum Hall devices

Schurr, J.; Ahlers, F. J.; Hein, G.; Melcher, J.; Pierz, K.; Overney, F.; Wood, B.M.

doi:10.1088/0026-1394/43/1/021

Cited by 22 publications

(59 citation statements)

References 21 publications

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“…The predictions of the RK model were also verified experimentally [20,21]. Other circuit models were developed in later years [21][22][23][24][25][26][27][28] and a general method of analysis based on the indefinite admittance matrix has been recently proposed [29].…”

Section: Introductionmentioning

confidence: 85%

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Circuit models and SPICE macro-models for quantum Hall effect devices

Ortolano

Callegaro

2015

Meas. Sci. Technol.

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Abstract. Quantum Hall effect (QHE) devices are a pillar of modern quantum electrical metrology. Electrical networks including one or more QHE elements can be used as quantum resistance and impedance standards. The analysis of these networks allows metrologists to evaluate the effect of the inevitable parasitic parameters on their performance as standards. This paper presents a systematic analysis of the various circuit models for QHE elements proposed in the literature, and the development of a new model. This last model is particularly suited to be employed with the analogue electronic circuit simulator SPICE. The SPICE macro-model and examples of SPICE simulations, validated by comparison with the corresponding analytical solution and/or experimental data, are provided.Circuit models and SPICE macro-models for quantum Hall effect devices 2

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Section: Introductionmentioning

confidence: 85%

“…Nonetheless, a circuit model can be a useful basis for taking into account nonidealities (e.g. nonzero longitudinal resistances [24,27], parasitic elements in AC regime [41]) or to develop a SPICE macro-model, as we shall see in the next section.…”

Section: Brief Review Of Qhe Circuit Modelsmentioning

confidence: 99%

Circuit models and SPICE macro-models for quantum Hall effect devices

Ortolano

Callegaro

2015

Meas. Sci. Technol.

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“…(a) Schematic representation of a QHE device with eight terminals of which two are not bonded. (b) Equivalent circuit [27]. (c) Equivalent circuit of a QHE device at which lead 1 is used for a magnetocapacitance measurement.…”

Section: Appendix B Connection Scheme Of Qhe Devicesmentioning

confidence: 99%

Magnetocapacitance and loss factor of GaAs quantum Hall effect devices

2014

Self Cite

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We present a simple and accurate coaxial bridge capable of measuring the magnetocapacitance and the associated loss factor of a quantum Hall effect device, with and without an external Hall current-a situation where commercial instruments are limited. We interpret the results in terms of the model of compressible and incompressible regions in the two-dimensional electron gas and we deduce a novel empirical relation between the loss factor and the voltage dependence of the magnetocapacitance. This highlights the reason for the linear voltage dependence of the loss factor whose elimination is the basis for all metrological applications of the quantum Hall resistance at alternating current.

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“…The quantized Hall resistance of a QHE sample is usually found to be current and frequency dependent. That lack of precision is caused by ac-losses [4,5]. One knows that these losses are linked to the charge distribution on the edges of the 2DEG, and that a good ac-quantization of the Hall resistance can be achieved in gated samples, by biasing a gate [6].…”

Section: Introductionmentioning

confidence: 99%

“…One knows that these losses are linked to the charge distribution on the edges of the 2DEG, and that a good ac-quantization of the Hall resistance can be achieved in gated samples, by biasing a gate [6]. For ungated samples, ac-losses are explained by a "Polarization Model" and a "Capacitive Model" [4,5], however the origin of these aclosses is not yet understood and other approaches have been explored [7,8].…”

Section: Introductionmentioning

confidence: 99%

AC-magnetotransport of a 2DEG in the quantum Hall regime

Herńandez¹,

Chaubet²

2014

AIP Conference Proceedings

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Magnetotransport in two-dimensional n -In Ga As ∕ Ga As double-quantum-well structures near the transition from the insulator to the quantum Hall effect regime Low Temp.Abstract. In this paper we present an ac-magneto-transport study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, for frequencies in the range [100Hz, 1MHz]. We present a new approach to understand admittance measurements based in the Landauer-Buttiker formalism for QHE edge channels and taking into account the capacitance and the topology of the cables connected to the contacts used in the measurements. Our model predicts an universal behavior with the a-dimensional parameter RC where R is the 2 wires resistance of the 2DEG, C the capacitance cables and the angular frequency, in agreement with experiments.

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AC longitudinal and contact resistance measurements of quantum Hall devices

Cited by 22 publications

References 21 publications

Circuit models and SPICE macro-models for quantum Hall effect devices

Circuit models and SPICE macro-models for quantum Hall effect devices

Magnetocapacitance and loss factor of GaAs quantum Hall effect devices

AC-magnetotransport of a 2DEG in the quantum Hall regime

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