“…Using the EIS‐Spectrum Analyzer program, [ 25 ] the EECs elements’ best fitting values were calculated and are listed in Table S5, Supporting Information. The equation ( τ = RC ) [ 26 ] may be used to compute the charge carrier lifetime at different interfaces under these measured conditions The charge carrier lifetime at the Au/InP interface increased from 0.62 to 2.59 μs after H 2 plasma treatment, whereas the charge carrier lifetime deeper into the InP is found to be 10.65 μs. It was also observed previously that the minority‐carrier lifetime of InP increases as the carrier concentration reduces and reported to reach a high value of 3 μs.…”
III–V semiconductors are among the highest performing materials for solar energy conversion devices. Exposing III–V semiconductors to a hydrogen plasma can improve optoelectronic properties and is a critical step in fabricating efficient InP solar cells. However, there is a limited understanding of the changes induced by hydrogen plasma exposure to the surface and in the bulk of III–V semiconductors. Herein, it is demonstrated that a 19.3% efficient p‐InP solar cell with a TiO2 electron selective contact layer can be achieved by exposing the InP substrate to hydrogen plasma. Detailed investigations employing ultraviolet photoelectron spectroscopy and capacitance–voltage measurement unveil that the hydrogen plasma exposure on p‐InP leads to charge carrier polarity inversion in the near‐surface region (charge inversion layer) while simultaneously reducing the carrier concentration (charge‐depleted layer) in the bulk. The study provides important insights into the impact of hydrogen plasma exposures on InP which may lead to more efficient optoelectronic devices such as solar cells, photodetectors, light‐emitting diodes, and photoelectrochemical cells.
“…Using the EIS‐Spectrum Analyzer program, [ 25 ] the EECs elements’ best fitting values were calculated and are listed in Table S5, Supporting Information. The equation ( τ = RC ) [ 26 ] may be used to compute the charge carrier lifetime at different interfaces under these measured conditions The charge carrier lifetime at the Au/InP interface increased from 0.62 to 2.59 μs after H 2 plasma treatment, whereas the charge carrier lifetime deeper into the InP is found to be 10.65 μs. It was also observed previously that the minority‐carrier lifetime of InP increases as the carrier concentration reduces and reported to reach a high value of 3 μs.…”
III–V semiconductors are among the highest performing materials for solar energy conversion devices. Exposing III–V semiconductors to a hydrogen plasma can improve optoelectronic properties and is a critical step in fabricating efficient InP solar cells. However, there is a limited understanding of the changes induced by hydrogen plasma exposure to the surface and in the bulk of III–V semiconductors. Herein, it is demonstrated that a 19.3% efficient p‐InP solar cell with a TiO2 electron selective contact layer can be achieved by exposing the InP substrate to hydrogen plasma. Detailed investigations employing ultraviolet photoelectron spectroscopy and capacitance–voltage measurement unveil that the hydrogen plasma exposure on p‐InP leads to charge carrier polarity inversion in the near‐surface region (charge inversion layer) while simultaneously reducing the carrier concentration (charge‐depleted layer) in the bulk. The study provides important insights into the impact of hydrogen plasma exposures on InP which may lead to more efficient optoelectronic devices such as solar cells, photodetectors, light‐emitting diodes, and photoelectrochemical cells.
“…This indicates that the dc conductivity is a thermally activated process. The temperature dependence of s dc can be represented by the usual Arrhenius relation: 50,51…”
In this work, a new porphyrin, 5,10,15,20-tetrakis{4-[((4-methoxyphenyl)acetyl)oxy]phenyl}porphyrin (H2TMAPP) (1), and its cobalt complex [CoII(TMAPP)] (2) were synthesized in good and quantitative yields, respectively.
“…28 The signicant broadening of the Z ′′ peaks with increasing light intensity indicates the presence of an illumination-dependent electrical relaxation phenomenon in the studied heterojunction. 29 Furthermore, both Z ′ and Z ′′ values converge at higher frequency, possibly indicating the accumulation of space charge in the device. The relaxation time (s) of the heterojunction can be determined using the equation 30 s = 1/2pf max (5) Fig.…”
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