AC electrical conductivity of a-Si:H

Abstract

The electrical conductivity of a‐Si:H films is measured in the frequency range of 100 to 6 × 106 Hz and in the temperature range 300 to 450 K. Loss peaks are detected, whose amplitude is affected by the Staebler‐Wronski effect, being enhanced by exposure to light and reduced by thermal annealing. The observed behaviour is dibed in terms of the superposition of two mechanisms of ac conduction: the loss peaks can be described in terms of a Simple Pair Hopping model, superimposed to a wideband behaviour described by the Correlated Barrier Hopping model.

Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

“…Similar conditions apply for the films prepared at faster rates. For GeO 2 layers of thicknesses of 250 nm prepared at fast rates the free carrier density is 2.4 18 10 × cm -3 . It is mentioned that high deposition rates causes poor crystallinity.…”

“…. The good consistency between the experimentally determined and theoretically estimated conductivity and capacitance spectral data assures the domination of the quantum mechanical tunneling at low frequencies below 760 MHz and the domination of correlated barrier hopping at high frequencies [15][16][17][18] . The poor fitting of the total conductivity at high frequencies (1000-1600 MHz) can ascribed to the existence of more than one kind of correlated and tunneling barriers which needs additional fitting to explore its origin 19 .…”