AC conductivity and dielectric behavior of Cu-S-Te chalcogenide glassy system

Ojha, Swarupa; Roy, Malabika; Chamuah, Anil; Bhattacharya, Koyel; Bhattacharya, Sanjib

doi:10.1016/j.matlet.2019.126792

Cited by 18 publications

(6 citation statements)

References 15 publications

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“…XRD results can be employed to explore more insight of the as-prepared samples. For this purpose, the dislocation density (length of dislocation lines per unit volume of the partially crystalline materials) [29][30][31][32] has been estimated, since it is related to the formation of crystallographic irregularity or a defect inside the materials [33]. The dislocation density (δ) can be presented as [33]:…”

Section: Resultsmentioning

confidence: 99%

Electrical transport of chalcogenide glassy system: interpretation by Hunt’s model and microstructure

Ojha

Roy

Chamuah³

et al. 2020

SN Appl. Sci.

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Ag 2 S doped Sulphur-Tellurium chalcogenide glassy system has been developed and their dielectric properties and electrical conductivity have been studied. Electrical conductivity via hopping of polarons in the present system is found to decrease due to large number of defects. TEM micrographs reveal the formation of Ag 2 S, Ag 2 Te and AgTe 3 nanophases, whose sizes are found to decrease with compositions. Almond-West formalism has been used to analyze the thermally activated nature of conductivity spectra. Hunt's model is used to reveal dielectric relaxation process with composition, which is justified by microstructure, revealed from TEM micrographs. Peak frequency (ω m) corresponding to imaginary modulus spectra shows Arrhenius relation. The results may reveal the opening for the development, significance and investigation of electrical and dielectric properties of chalcogenide glassy system.

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Section: Resultsmentioning

confidence: 99%

Electrical transport of chalcogenide glassy system: interpretation by Hunt’s model and microstructure

Ojha

Roy

Chamuah³

et al. 2020

SN Appl. Sci.

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“…Trial and error attempts reveal that correlated barrier hopping (CBH) [50][51][52]54]model is found to be the most suitable theoretical to interprest the present dataset. In CBH Model [50][51][52]54], some pre-requisites such as definite hopping conduction paths of charge carriers (or polarons) in pairs, localized sites near Fermi level etc have been considered.The expression of S using CBH model [54] is as follows:…”

Section: 4ac Conductivity and Power-law Modelmentioning

confidence: 97%

“…On the other hand, defect model [53] can be regarded as the most successful one to explain high-temperature conductivity spectra. By virtue of latest development [54], it is noted that characteristic Ag-S vibration should influence phonon-assisted polaron hopping in the low-frequency zones.…”

Section: 4ac Conductivity and Power-law Modelmentioning

confidence: 99%

“…Asymmetric stretching modes of vibration of Zn-Te-Se bonds [54]are expected to influence phonon-assisted polaron hopping in the high-frequency zones. Out the second one is supposed to be the major component regarding conduction via polaron hopping.…”

Section: 4ac Conductivity and Power-law Modelmentioning

confidence: 99%

“…(10).One of the fitting parameter, relaxation times are found to be much less than those received from FT-IR analysis. The mismatch between these values may be due to the fact that CBH model [54] suggests only polaron hopping, but FT-IR analysis involves some functional groups due to mixed conduction process.…”

Section: 4ac Conductivity and Power-law Modelmentioning

confidence: 99%

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Mixed conduction in iodovanadate glass-nanocomposites: DC conductivity, hopping frequency, and frequency response curves

Poddar,

Roy,

Ali

et al. 2024

Ionics

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Here, the system of amorphous semiconducting glassy system, xAgI -(1-x) (0.1CdO -0.3 V2O5 -0.4 P2O5 -0.2ZnO) with x = 0, 0.05, 0.1, 0.2, 0.3, 0.4has been developed. The gradual change in the size of various nanocrystallites such as VO2 , Zn2V2O7, V6O13, ZnV3O8 and P and the development of new phases of their combinations have been pronounced due to a gradual increase in AgI content. This may lead to the possible structural changes of the system under investigation. V-O-V vibration at lower energy may be responsible for weakening the covalent bond, which may be responsible for releasing vanadium ion to contribute more electron/ polaron. Correlated barrier hopping (CBH) model has been found to appropriate to predict the hopping conduction paths of charge carriers (or polarons) in pairs via current transfer between localized sites at the Fermi level. By incorporation of more and more AgI content in the composition, more bridging oxygen is expected to be formed in the composition and a strong covalent bonding between Ag + and O -2 may play dominating role for Ag + transport over polaron hopping. Double activation energy corresponding to DC conductivity in a wide range of temperature may be considered as the signature of mixed conduction process in the present system.Estimated values of frequency exponent (n) may be highlighted to validate this mixed conduction process. Percolation type of motion of polaron may be predicted from the higher values of n for the as-prepared samples with higher 2 AgIcontent. Similarly, three dimensional Ag + motion may be the dominating charge carriers for the samples with higher AgI content as evident from the moderate values of n.A schematic conduction model has been proposed to explain the nature of electrical conductivity in the present system.

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Features of Lithium-Ion Doped Glassy Systems

Bhattacharya

2022

Lithium Ion Glassy Electrolytes

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AC conductivity and dielectric behavior of Cu-S-Te chalcogenide glassy system

Cited by 18 publications

References 15 publications

Electrical transport of chalcogenide glassy system: interpretation by Hunt’s model and microstructure

Electrical transport of chalcogenide glassy system: interpretation by Hunt’s model and microstructure

Mixed conduction in iodovanadate glass-nanocomposites: DC conductivity, hopping frequency, and frequency response curves

Features of Lithium-Ion Doped Glassy Systems

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