2002
DOI: 10.1088/0026-1394/39/1/2
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AC behaviour and loss phenomena in quantum Hall samples

Abstract: The ac quantum Hall resistance of several GaAs-based samples has been investigated. The influence of temperature, current and frequency was measured for the plateau . Some measurements were performed for the plateau in order to determine the scaling behaviour with respect to . The plateau edge is shown to depend on the electronic temperature and the current at the plateau edge is distributed over the whole width of the sample. At the plateau centre, edge-current effects become apparent which depend on how clos… Show more

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Cited by 22 publications
(36 citation statements)
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References 35 publications
(45 reference statements)
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“…This behaviour originates in the exponential increase of the localisation length with increasing Landau band index. Due to the applied frequencyhω/V = 0.008 the σ xy plateau is not flat, but rather has a parabola shape near the minimum at ν = 1.0, similar to what has been observed in experiment [24]. An example of the deviation of σ xy (ω) from its quantised dc value is shown on the right hand side of Fig.…”
Section: Frequency Dependent Hall-conductivitysupporting
confidence: 80%
See 1 more Smart Citation
“…This behaviour originates in the exponential increase of the localisation length with increasing Landau band index. Due to the applied frequencyhω/V = 0.008 the σ xy plateau is not flat, but rather has a parabola shape near the minimum at ν = 1.0, similar to what has been observed in experiment [24]. An example of the deviation of σ xy (ω) from its quantised dc value is shown on the right hand side of Fig.…”
Section: Frequency Dependent Hall-conductivitysupporting
confidence: 80%
“…A power-law curve ∼ ω 0.5 can be fitted to the data points. Using this empirical relation, we find a relative deviation of the order of 5 · 10 −6 when extrapolated down to to 1 kHz, the frequency usually applied in metrological experiments [21,22,23,24]. Therefore, there is no quantisation in the neighbourhood of integer filling even in an ideal 2d electron gas without contacts, external leads, and other experimental imperfections.…”
Section: Frequency Dependent Hall-conductivitymentioning
confidence: 87%
“…3) [24] and comparable to that of GaAs devices not double shielded without a metal backplane. Furthermore, the frequency coefficient of the graphene device is negative whereas all previously reported GaAs devices show a positive frequency coefficient [24,12]. In fact, parasitic capacitances can lead to both positive and negative frequency dependence (while the dissipation factor is always positive).…”
mentioning
confidence: 57%
“…First of all, the graphene plateau is flat within 1 part in 10 7 , or even better, at all measured frequencies over a range of several tesla, exhibiting no frequency-dependent curvature. In contrast, GaAs devices show a strong plateau curvature proportional to frequency [24] which originates from the dissipative part of the capacitances between the 2DES and surrounding metals [25]. In GaAs devices, this effect compromises the precision of the application as an impedance standard unless it is eliminated by the double-shielding method [13].…”
mentioning
confidence: 99%
“…The measured 2ω signals of V H are about 2000 times larger than the estimated 2ω component due to a possible nonlinear effect. A capacitive effect, such as those observed in the AC quantum Hall effect [17], could be considered as well. However, the frequency of the AC current used in our measurement is low enough (∼17 Hz) that such effects are not important.…”
mentioning
confidence: 99%