Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface

Agarwal, Sumit; Takano, Akihiro; Sanden, M.C.M. van de; Maroudas, Dimitrios; Aydil, Eray S.

doi:10.1063/1.1522400

Cited by 47 publications

(33 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…42͒ related to polymeric ͑SiH 2 ͒ n groups. 43 The high hydrogen fraction in this state is confirmed by the appearance of a 2140-cm −1 component in the stretching mode attributed to uSiH 3 groups, 44,45 which would terminate the polymer chains. So peak A corresponds to polymer chains.…”

Section: A Identification Of the Dehydrogenation Processesmentioning

confidence: 87%

Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials

et al. 2006

View full text Add to dashboard Cite

Differential scanning calorimetry ͑DSC͒ was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis ͑EGA͒ has led to the identification of four dehydrogenation processes arising from polymeric chains ͑A͒, SiH groups at the surfaces of internal voids ͑AЈ͒, SiH groups at interfaces ͑B͒, and in the bulk ͑C͒. All of them are slightly exothermic with enthalpies below 50 meV/͑H atoms͒, indicating that, after dissociation of any SiH group, most dangling bonds recombine. The kinetics of the three low-temperature processes ͓with DSC peak temperatures at around 320 ͑A͒, 360 ͑AЈ͒, and 430°C ͑B͔͒ exhibit a kinetic-compensation effect characterized by a linear relationship between the activation entropy and enthalpy, which constitutes their signature. Their Siu H bond-dissociation energies have been determined to be E͑Siu H͒ 0 = 3.14 ͑A͒, 3.19 ͑AЈ͒, and 3.28 eV ͑B͒. In these cases it was possible to extract the formation energy E͑DB͒ of the dangling bonds that recombine after Siu H bond breaking ͓0.97 ͑A͒, 1.05 ͑AЈ͒, and 1.12 ͑B͔͒. It is concluded that E͑DB͒ increases with the degree of confinement and that E͑DB͒ Ͼ 1.10 eV for the isolated dangling bond in the bulk. After Siu H dissociation and for the low-temperature processes, hydrogen is transported in molecular form and a low relaxation of the silicon network is promoted. This is in contrast to the high-temperature process for which the diffusion of H in atomic form induces a substantial lattice relaxation that, for the conventional amorphous sample, releases energy of around 600 meV per H atom. It is argued that the density of sites in the Si network for H trapping diminishes during atomic diffusion.

show abstract

Section: A Identification Of the Dehydrogenation Processesmentioning

confidence: 87%

Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials

et al. 2006

View full text Add to dashboard Cite

show abstract

“…17 Briefly, the experiments were conducted in a stainless steel, inductively coupled plasma ͑ICP͒ reactor. The plasma was generated by applying radiofrequency ͑rf͒ power at 13.56 MHz to a planar spiral coil seated on a quartz window, which forms the vacuum seal.…”

Section: A Plasma Reactor and The Qms Housingmentioning

confidence: 99%

Measurement of absolute radical densities in a plasma using modulated-beam line-of-sight threshold ionization mass spectrometry

Agarwal¹,

Quax²,

Sanden³

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

Using modulated beam line-of-sight threshold ionization mass spectrometry (LOS-TIMS) we measured absolute O, O2, and Ar densities, and the average neutral-gas temperature in an O2/Ar electrical discharge as a function of pressure in the plasma chamber and the mole fraction of Ar in O2; the pressure and mole fraction range was 25–200 mTorr and 0–0.90, respectively. Although LOS-TIMS is a versatile tool for measuring absolute radical densities, it requires careful vacuum design and calibration to account for various sources of error such as the contribution to the quadrupole mass spectrometer (QMS) ion current from the background gases, the ion mass-to-charge ratio dependent sensitivity of the various QMS components, and space-charge limitations in the QMS ionizer. In addition, collisions within the molecular beam extracted from the discharge must be taken into account particularly for higher plasma chamber pressures (>75 mTorr). In our measurements, these effects are carefully considered and the consequences of ignoring them are discussed. The O atom density increases with pressure and O2 mole fraction in the feed gas and is in the range of 2.1×1018–2.6×1019 m−3. At low pressures, our measurements show that the O2 translational temperature is higher than that for Ar.

show abstract

“…12 The power absorbed by the plasma and N 2 flow rate were kept constant at 750 W and 50 std. cm 3 /min, respectively, while the gas pressure was varied from 10 to 200 mTorr.…”

mentioning

confidence: 99%

Absolute densities of N and excited N2 in a N2 plasma

Agarwal

Hoex

Sanden

et al. 2003

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface

Cited by 47 publications

References 56 publications

Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials

Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials

Measurement of absolute radical densities in a plasma using modulated-beam line-of-sight threshold ionization mass spectrometry

Absolute densities of N and excited N2 in a N2 plasma

Contact Info

Product

Resources

About