Absorption illumination of a 2D rotator semi-infinite thermoelastic medium using a modified Green and Lindsay model

Mohamed, Mokhtar; Lotfy, Kh.; El-Bary, Alaa A.; Mahdy, A. M. S.

doi:10.1016/j.csite.2021.101165

Cited by 12 publications

(4 citation statements)

References 41 publications

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“…where T 1 (x, s)expresses the deterministic temperature distribution and ϕ(x, t)is the Laplace inverse of Eq. (36). However, Eq.…”

Section: Stochastic Temperature (Thermal Wave)mentioning

confidence: 97%

“…The main variables according to the semiconductor medium are the temperature distribution (thermal wave) T ⃗ r, t , the carrier density distribution (plasma wave) N ⃗ r, t , the displacement distribution u ⃗ r, t (elastic wave). The governing equations which describe the coupled system in semiconductor are [33][34][35][36][37][38][39].…”

Section: Mathematical Formulation Of the Problemmentioning

confidence: 99%

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A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

Lotfy

Ahmed

El-Bary

et al. 2022

Silicon

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A novel technique under the effect of stochastic heating due to the thermal effect of the photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the non-local semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one dimension (1D) according to the elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields in linearity form. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) of the main physical quantities along different sample paths graphically and discussed for the non-local silicon semiconductor material.

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“…where T 1 (x, s)expresses the deterministic temperature distribution and ϕ(x, t)is the Laplace inverse of Eq. (36). However, Eq.…”

Section: Stochastic Temperature (Thermal Wave)mentioning

confidence: 97%

Section: Mathematical Formulation Of the Problemmentioning

confidence: 99%

A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

Lotfy

Ahmed

El-Bary

et al. 2022

Silicon

Self Cite

View full text Add to dashboard Cite

show abstract

“…The main variables according to the semiconductor medium are the temperature distribution (thermal wave) T ( r , t), the carrier density distribution (plasma wave) N ( r , t), and the displacement distribution u( r , t) (elastic wave). The governing equations which describe the coupled system in semiconductor are [35][36][37][38][39][40][41] ∂…”

Section: Mathematical Formulation Of the Problemmentioning

confidence: 99%

A novel stochastic photo-thermoelasticity model according to a diffusion interaction processes of excited semiconductor medium

et al. 2022

Self Cite

View full text Add to dashboard Cite

A novel technique under the impact of stochastic heating due to the thermal effect of photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one-dimensional elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic numerical simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) the main physical quantities along different sample paths graphically and discussed.

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“…It is even possible for specialists to work and solve common problems in different fields such as medicine [51][52][53], biotechnology [54,55], and micro-technology [56][57][58] as a result of advances in numerical calculations and the use of the recent experiences mentioned above. These numerical methods offer acceptable accuracy in solving problems related to thermo-elastic and porous media [59][60][61]. The accuracy and convergence speed of every numerical scheme is very crucial.…”

mentioning

confidence: 99%

Impact of Artificial Compressibility on the Numerical Solution of Incompressible Nanofluid Flow

Adibi¹,

Ahmed²,

Razavi³

et al. 2023

Computers, Materials &Amp; Continua

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The numerical solution of compressible flows has become more prevalent than that of incompressible flows. With the help of the artificial compressibility approach, incompressible flows can be solved numerically using the same methods as compressible ones. The artificial compressibility scheme is thus widely used to numerically solve incompressible Navier-Stokes equations. Any numerical method highly depends on its accuracy and speed of convergence. Although the artificial compressibility approach is utilized in several numerical simulations, the effect of the compressibility factor on the accuracy of results and convergence speed has not been investigated for nanofluid flows in previous studies. Therefore, this paper assesses the effect of this factor on the convergence speed and accuracy of results for various types of thermo-flow. To improve the stability and convergence speed of time discretizations, the fifth-order Runge-Kutta method is applied. A computer program has been written in FORTRAN to solve the discretized equations in different Reynolds and Grashof numbers for various grids. The results demonstrate that the artificial compressibility factor has a noticeable effect on the accuracy and convergence rate of the simulation. The optimum artificial compressibility is found to be between 1 and 5. These findings can be utilized to enhance the performance of commercial numerical simulation tools, including ANSYS and COMSOL.

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Absorption illumination of a 2D rotator semi-infinite thermoelastic medium using a modified Green and Lindsay model

Cited by 12 publications

References 41 publications

A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

A novel stochastic photo-thermoelasticity model according to a diffusion interaction processes of excited semiconductor medium

Impact of Artificial Compressibility on the Numerical Solution of Incompressible Nanofluid Flow

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