1970
DOI: 10.1016/0038-1098(67)90144-5
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Absorption-edge structure in platinum antimonide

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Cited by 7 publications
(2 citation statements)
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“…Tight binding band structure calculations predict that PtSb 2 is a semiconductor with an indirect energy gap of 0.08 eV [11]. Infrared absorption measurements, corroborated by measurements of the temperature dependence of the resistivity (ρ), found an indirect energy gap of 0.11 eV [7,12]. Transport properties vary considerably among samples because of deviations from ideal stoichiometry.…”
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confidence: 91%
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“…Tight binding band structure calculations predict that PtSb 2 is a semiconductor with an indirect energy gap of 0.08 eV [11]. Infrared absorption measurements, corroborated by measurements of the temperature dependence of the resistivity (ρ), found an indirect energy gap of 0.11 eV [7,12]. Transport properties vary considerably among samples because of deviations from ideal stoichiometry.…”
mentioning
confidence: 91%
“…The basic properties of PtSb 2 have been established by previous experiments [7][8][9][10][11][12]. Undoped PtSb 2 crystallizes in Fig.…”
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confidence: 99%