1987
DOI: 10.1063/1.337946
|View full text |Cite
|
Sign up to set email alerts
|

Absorption edge measurements in chemically deposited pyrite FeS2 thin layers

Abstract: Articles you may be interested inMagnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic applications J. Vac. Sci. Technol. A 30, 04D102 (2012); 10.1116/1.3699022Opticalabsorption study of synthetic pyrite FeS2 single crystals

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

1
9
0

Year Published

1990
1990
2018
2018

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 24 publications
(10 citation statements)
references
References 11 publications
1
9
0
Order By: Relevance
“…11 However, in many cases, properties such as the atomic structure of surfaces and interfaces, the nature of defects and the chemistry and energetics of molecular adsorption are difficult, if not impossible, to determine using available experimental techniques.…”
Section: Introductionmentioning
confidence: 99%
“…11 However, in many cases, properties such as the atomic structure of surfaces and interfaces, the nature of defects and the chemistry and energetics of molecular adsorption are difficult, if not impossible, to determine using available experimental techniques.…”
Section: Introductionmentioning
confidence: 99%
“…There have been a number of recent experimental studies of the bulk and surfaces of iron pyrite using a wide range of techniques including X-ray photoelectron spectroscopy (XPS) [10,11], low energy electron diffraction (LEED), ultraviolet photoelectron spectroscopy (UPS) and scanning-tunneling microscopy (STM) [12], inverse ultraviolet photoemission spectroscopy [13,14], X-ray adsorption [15], and X-ray emission spectroscopy [16]. The measured values for the energy band gap vary in a broad range from 0.7 eV to 2.62 eV.…”
mentioning
confidence: 99%
“…3b. The optical absorption of indirect semiconductor was caused by the transitions of electrons from the valence band to the conductive band as well as assisting phonons [21]. The band gap of FeS 2 microparticles was 0.88 eV and the bandgap of FeS 2 nanotube arrays was about 1.24 eV which is 0.29 eV higher compared with the bulk pyrite of 0.95 eV.…”
Section: Resultsmentioning
confidence: 99%