Absorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effects

Martı́nez-Orozco, J.C.; Rodríguez-Magdaleno, K.A.; Suárez-López, J.R.; Duque, C.A.; Restrepo, R.L.

doi:10.1016/j.spmi.2016.02.034

Cited by 26 publications

(8 citation statements)

References 37 publications

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“…The comparison between the two protocols of dissociation has been studied and analysed deeply by considering the binding energy and optical absorption [14]. We have found considerable investigations on optical properties in literature, for more detail we refer the reader to some interesting manuscripts [15][16][17][18][19][20][21][22][23][24][25]. Recently we have studied the non-linear optical properties of an exciton confined in different QD shapes taking into account the pressure (P) and temperature (T) effects.…”

Section: Introductionmentioning

confidence: 99%

Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

et al. 2021

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This theoretical study is devoted to the effects of pressure and temperature on the optoelectronic properties assigned to the first lowest transition of the (D+,X) excitonic complex (exciton-ionized donor) inside a single AlAs/GaAs/AlAs spherical quantum dot. Calculations are performed within the effective mass approximation theory using the variational method. Optical absorption and refractive index as function of the degree of confinement, pressure, and temperature are investigated. Numerical calculation shows that the pressure favors the electron-hole and electron-ionized donor attractions which leads to an enhancement of the binding energy, while an increasing of the temperature tends to reduce it. Our investigations show also that the resonant peaks of the absorption coefficient and the refractive index are located in the terahertz region and they undergo a shift to higher (lower) therahertz frequencies when the pressure (temperature) increases. The opposite effects caused by temperature and pressure have great practical importance because they offer an alternative approach for the adjustment and the control of the optical frequencies resulting from the transition between the fundamental and the first excited state of exciton bound to an ionized dopant. The comparison of the optical properties of exciton, impurity and (D+,X) facilitates the experimental identification of these transitions which are often close. Our investigation shows that the optical responses of (D+,X) are located between the exciton (high energy region) and donor impurity (low energy region) peaks. The whole of these conclusions may lead to the novel light detector or source of terahertz range.

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Section: Introductionmentioning

confidence: 99%

Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

et al. 2021

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“…In comparison with a simple system, a two-layer deltadoped structure can increase the mobility of the charge carriers and the conduction channel number that allows a greater number of transitions between states. [29,30] The double-δ -doped structure is good a candidate to improve the optical properties for applications in nonlinear optics and optoelectronics devices. [7,30] The changes in the interlayer distance can significantly affect the electronic structure mainly due to the changes in energy band gap and the dipolar moment.…”

Section: Introductionmentioning

confidence: 99%

“…[29,30] The double-δ -doped structure is good a candidate to improve the optical properties for applications in nonlinear optics and optoelectronics devices. [7,30] The changes in the interlayer distance can significantly affect the electronic structure mainly due to the changes in energy band gap and the dipolar moment. [31] Some previous models have studied the physical properties of double-δ -doped systems.…”

Section: Introductionmentioning

confidence: 99%

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*

Noverola-Gamas¹,

Gaggero‐Sager²,

Oubram³

2019

Chinese Phys. B

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In the framework of the Thomas–Fermi (TF) approach, a model for the p-type double-δ-doped (DDD) system in GaAs is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped GaAs.

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“…The nonlinear optical properties of QWs, in particular optical absorption coefficients (OACs), the change of index changes (RICs), second (SHG) and third harmonic generations (THG) or nonlinear optical rectification (NOR), have attracted a lot of attention in theoretical studies in recent years [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. For example, Aytekin et.…”

Section: Introductionmentioning

confidence: 99%

“…The effect of nonresonant ILF on the linear and nonlinear ISB optical properties in a strained InGaN/GaN QW has been investigated by Karimi and Vafaei [18]. Orozco et al [19] reported the computation of the linear and third order corrections, due to ILF effects, of the ACs and RICs, for an asymmetric double -doped GaAs MIGFET-like potential profile. Li et al [20] intensively studied the effect of position-dependent effective mass on the nonlinear optical properties in a GaAs/AlAs semiconductor QW.…”

Section: Introductionmentioning

confidence: 99%

Kısa Erimli Dipsiz Üstel Potansiyelli Bir Kuantum Kuyusunun Doğrusal Olmayan Optiksel Özellikleri

Ungan

2018

Cumhuriyet Science Journal

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In the present study, the effect of the depth of the confinement potential on the nonlinear optical of a GaAs quantum well with short-range bottomless exponential potential is studied in detail. The energy eigenvalues and eigenfunctions of this structure are calculated within the framework of effective mass and envelope function approximations. Analytic formulas for the linear, third-order nonlinear and total absorption coefficients and relative refractive index changes are obtained using the compact-density matrix approach (CDMA) and iterative method. Based on this model, our obtained numerical results are reported as a function of incident photon energy for several values of the depth of the confinement potential. The results show that the linear, third order nonlinear, and total absorption coefficients and relative refractive index changes are strongly affected by the depth of the confinement potential.

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Absorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effects

Cited by 26 publications

References 37 publications

Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*

Kısa Erimli Dipsiz Üstel Potansiyelli Bir Kuantum Kuyusunun Doğrusal Olmayan Optiksel Özellikleri

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