Absorption and photoluminescence features caused by defects in InN

Alexandrov, Dimiter; Butcher, K.S.A.; Wintrebert-Fouquet, M.

doi:10.1016/j.jcrysgro.2004.05.036

Cited by 32 publications

(23 citation statements)

References 22 publications

(26 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is found that the hydrogen like energy level E n varies over the interval 0.50 -0.82 eV and these energies are close to the experimental results about the photoluminescence spectra of In-rich regions of In x Ga 1-x N reported in [14][15][16]. The same type of exciton in InO y N 1-y is investigated in details in [5]. It is found that the hydrogen like energy level E n varies over the interval 0.84 -1.01 eV, and that it determines the optical transitions connected with photon radiation due to annihilations between the electrons and the holes belonging to these excitons in InO y N 1-y .…”

Section: )supporting

confidence: 82%

“…i) Every quasi-elementary cell (defined in [5] for multinary crystal) is built by points, which are identical with the corresponding points in all other quasi-elementary cells of the multinary crystal in term of electron propagator (The quasi-elementary cell doesn't contain any other points. ); ii)…”

Section: Metric System and Symmetries In Multinary Crystalmentioning

confidence: 99%

“…point Γ of the electron band structure) will be presented for In x Al 1-x N. (Details of these calculations are given in [5,10].) Each type of quasi-elementary cell forms sector υ of the corresponding electron band structure (υ = 1, 2, 3, 4, 5).…”

Section: )mentioning

confidence: 99%

“…In terms of both the optical absorption and the photoluminescence the energy band gap of In x Al 1-x N has to be determined as energy differences between Γ Fig.2, and the corresponding energy intervals are due to defects in the crystal lattices of In x Al 1-x N. The nature of these shifts is different from the nature of the shifts of the boundaries of the energy band gap described in [11,12]. The same approach is used for determination of the energy states in In x Ga 1-x N [10], in InO y N 1-y [5] and in non-stoichiometric InN [13]. (Fig.2).…”

Section: )mentioning

confidence: 99%

See 3 more Smart Citations

Electron band structure and properties of disordered semiconductor compound alloys

Alexandrov¹,

Butcher²,

Tansley³

2007

WIT Transactions on Modelling and Simulation, Vol 46

View full text Add to dashboard Cite

A new metric system called the electron metric system, having a basic metric constant, is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconductor compound alloys are defined according to the electron metric system. The basic metric constant is found on the basis of a diatomic tetrahedral cell. The electron wave vector in the new system is found and the electron energy states are determined. Correlation is shown between the electron energy and the electron wave vector in the multinary crystal. The LCAO electron band structures of In x Al 1-x N are presented. The phenomenon tunnel optical absorption is investigated in In x Al 1-x N, in In x Ga 1-x N, in InN containing oxygen and in non-stoichiometric InN. It is found the optical absorption edges begin in energies much lower than the energy band gaps due to this phenomenon. Existence of excitons of the structure is shown in these semiconductors and it is found that the peaks of the PL spectra correspond to annihilation energies of these excitons.

show abstract

Section: )supporting

confidence: 82%

Section: Metric System and Symmetries In Multinary Crystalmentioning

confidence: 99%

Section: )mentioning

confidence: 99%

Section: )mentioning

confidence: 99%

See 2 more Smart Citations

Electron band structure and properties of disordered semiconductor compound alloys

Alexandrov¹,

Butcher²,

Tansley³

2007

WIT Transactions on Modelling and Simulation, Vol 46

View full text Add to dashboard Cite

show abstract

“…The tunnel optical absorption is investigated in details in [8,9]. The basis of this phenomenon is the overlapping between the electron wave function | i > of the initial electron state and the electron wave function | f > of the final electron state in term of optical transition.…”

Section: Discussionmentioning

confidence: 99%