Absorption and luminescence studies of free-standing porous silicon films

Xie, Y. H.; Hybertsen, Mark S.; Wilson, William L.; Ipri, S. A.; Carver, G.E.; Brown, W. L.; Dons, Edwin; Weir, B. E.; Kortan, A. R.; Watson, George; Liddle, A. J.

doi:10.1103/physrevb.49.5386

Cited by 113 publications

(50 citation statements)

References 24 publications

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“…A variety of por-Si samples prepared under very different conditions [6,2,7,8] were studied with TEM, x-ray-and irabsorption, a-recoil, and luminescence excitation and emission spectroscopies. In order to minimize 0 contamination, which was very easily detectable, air exposure of the freshly prepared samples was limited to 4 0 min in all but the TEM and photo-oxidation measurements.…”

Section: Methodsmentioning

confidence: 99%

Size, Shape, and Crystallinity of Luminescent Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si

et al. 1994

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Near-edge and extended x-ray absorption fine structure measurements from a wide variety of H-passivated porous Si samples and oxidized Si nanocrystals, combined with electron microscopy, ir-absorption, α-recoil, and luminescence emission data, provide a consistent structural picture of the species responsible for the luminescence observed in these systems. For luminescent porous Si samples peaking in the visible region, i. e., ≤700nm, their mass-weighted-average structures are determined here to be particles–not wires, whose short-range character is crystalline – not amorphous, and whose dimensions – typically <15 Å – are significantly smaller than previously reported or proposed. These results depend only on sample luminescence behavior, not on sample preparation details, and thus have general implications in describing the mechanism responsible for visible luminescence in porous silicon. New results are also presented which demonstrate that the observed luminescence is unrelated to either the photo-oxidized Si species in porous Si or the interfacial suboxide species in the Si nanocrystals.

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Section: Methodsmentioning

confidence: 99%

Size, Shape, and Crystallinity of Luminescent Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si

et al. 1994

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“…Some of these two approaches specify a variation of the gap width or emission energy as the inverse power of the particle size. [9][10][11][12][13][14][15] In this respect, the quantum confinement theory predicts a variation of the gap width and a concomitant shift of the PL energy of about 1 eV when the particle size changes a few nm.…”

Section: Photoluminescence From Silicon Nano-particles Synthesized Bymentioning

confidence: 97%

Photoluminescence from silicon nano-particles synthesized by laser-induced decomposition of silane

Botti

Coppola

Gourbilleau³

et al. 2000

Journal of Applied Physics

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“…Meanwhile, we also observed that the transmission at the low energy (the plateau region), T 0 , increases with porosity. The blue-shifts of the transmission are correspondent to the results given elsewhere [20][21][22][23][24][25]. Figure 2 shows four Raman spectra of the free-standing p PS films with porosities of 58, 68, 79, and 87%.…”

Section: Resultsmentioning

confidence: 85%

“…Kovalev et al [21] have measured the temperature dependence of the absorption coefficient of PS and indicated that phonon-assisted optical absorption took place as expected from the indirect nature of crystalline silicon in contradiction to the prediction of the quantum confinement model and the Urbach tail-state model. Xie [22] observed that the blue-shift of the PL peak position coincided with that of the absorption spectra. Kanemitsu [14] reported that there was no clear size dependence of the PL peak energy, whereas an obvious blue-shift of optical absorption was observed with a decrease in the average diameter of Si crystallites.…”

Section: Introductionmentioning

confidence: 93%

Optical absorption property of oxidized free-standing porous silicon films

Guo

Liu

et al. 2000

Pure and Applied Chemistry

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Abstract:We have systematically studied the evolution of the optical absorption of freestanding PS films during thermal oxidation at 200°C in air. Our experiment results show the evolution of transmission curve is quite complicated, which red-shifts first and then blueshifts during thermal oxidation. At the same time, the transmission at the low energy decreases first and then increases. We propose an explanation as follows: (1) the energy gap associated with each crystallite should increase during thermal oxidation process, due to the quantum confinement effect; (2) the energy gap should decrease with an increase in oxygen termination atoms. Both the increasing of the gap due to the quantum confinement effect and the decreasing of the gap due to the Si-O bond formation cause a complicated evolution of optical absorption.

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Absorption and luminescence studies of free-standing porous silicon films

Cited by 113 publications

References 24 publications

Size, Shape, and Crystallinity of Luminescent Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si

Size, Shape, and Crystallinity of Luminescent Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si

Photoluminescence from silicon nano-particles synthesized by laser-induced decomposition of silane

Optical absorption property of oxidized free-standing porous silicon films

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