Absence of weak localization effects in strongly underdoped La2−xSrxCuO4

Cieplak, Marta Z.; Malinowski, A.; Guha, Saikat; Berkowski, M.

doi:10.1016/j.physc.2003.11.053

Cited by 4 publications

(8 citation statements)

References 26 publications

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“…This problem has been addressed before by the studies of the magnetoresistance (MR) at low T . The MR has been found to be large and negative [9,10,18] and correlated with the appearance of magnetic quasi-elastic neutron scattering in the SG phase [19]. The negative MR is believed to be related to a weak-ferromagnetic (WF) transition.…”

Section: Introductionmentioning

confidence: 91%

“…Looking for an alternative description we note that our recent studies indicated the importance of the e-e interactions for the low-T transport behaviour [9,10]. Therefore, we examine the VRH models which include the effect of the ee interactions on the density of states.…”

Section: Variable Range Hopping At B =mentioning

confidence: 99%

“…The carrier concentration in the two x = 0.03 films is most likely very close. The increase in p on going from sample S1 to S2 is accompanied by a 6% increase in the slope of the logarithmic dependence above T ln , S ln = dσ/d(lnT ) (caused by e-e interactions [9,10]). These changes give a consistent picture in which the e-e interactions, modifying the density of states near the Fermi level, also influence the conductivity in the VRH regime at low temperatures.…”

Section: Variable Range Hopping At B =mentioning

confidence: 99%

“…Below about 70 K the conductivity of the LSCO becomes proportional to ln T . We have clarified recently that this logarithmic T -dependence is caused by strong e-e interactions, rather than by conventional weak localization in two-dimensional (2D) systems [9,10]. On further cooling, below the x-dependent temperature which we will call T ln , a gradual change to a variable range hopping (VRH) regime is observed [11][12][13], where conductivity is described by the relation σ = σ 0 exp[−(T 0 /T ) w ].…”

Section: Introductionmentioning

confidence: 99%

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Variable range hopping in the spin-glass phase of La_2−xSr_xCuO₄

Malinowski¹,

Cieplak²,

Berkowski³

2008

J. Phys.: Condens. Matter

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The results of the in-plane transport measurements of strongly underdoped La 2−x Sr x CuO 4 films in magnetic fields up to 14 T and at temperatures down to 1.6 K are presented. While at high temperatures the resistivity of the films is metallic-like, the low-T transport is governed by the variable range hopping (VRH) mechanism. Careful analysis shows that the temperature dependence of the pre-exponential factor in Mott's VRH law cannot be neglected and the zero-field conductivity is best described by the formula σ = σ 0 T −2w exp[−(T 0 /T ) w ]. In a magnetic field parallel to CuO 2 planes the VRH law is retained, with both parameters, σ 0 and T 0 , decreasing by about 10-20% at 14 T. This effect may be related to the decrease of the tunnelling barrier between different antiferromagnetic clusters in the presence of a magnetic field.

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Section: Introductionmentioning

confidence: 91%

Section: Variable Range Hopping At B =mentioning

confidence: 99%

Section: Variable Range Hopping At B =mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Variable range hopping in the spin-glass phase of La_2−xSr_xCuO₄

Malinowski¹,

Cieplak²,

Berkowski³

2008

J. Phys.: Condens. Matter

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“…At the doping level near the critical point x c where superconductivity occurs, with decreasing T the resistances of cuprates show metallic behavior and then insulating behavior below certain T (T min ) at which normal-state resistance shows a minimum value. In chemically doped cuprates, the resistance upturn at low T could be attributed to various effects, for example, weak localization [48], Kondo scattering [49,50] or spin scattering [51,52]. Moreover, the T min of the chemically doped insulating samples is normally below ~70 K [48,51,53,54].…”

Section: Insulating Behavior Near Critical Pointmentioning

confidence: 99%

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

Zeng

Huang

et al. 2015

Phys. Rev. B

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We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects -quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (R c ) much lower than the pair quantum resistance R Q =h/(2e) 2 =6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs. Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate Supplemental Material

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Advancing Superconductivity with Interface Engineering

Liu,

Meng,

Mahmoudi

et al. 2024

Advanced Materials

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The development of superconducting materials has attracted significant attention not only for their improved performance, such as high transition temperature (TC), but also for the exploration of their underlying physical mechanisms. Recently, considerable efforts have been focused on interfaces of materials, a distinct category capable of inducing superconductivity at non‐superconducting material interfaces or augmenting the TC at the interface between a superconducting material and a non‐superconducting material. Here, two distinct types of interfaces along with their unique characteristics are reviewed: interfacial superconductivity and interface‐enhanced superconductivity, with a focus on the crucial factors and potential mechanisms responsible for enhancing superconducting performance. A series of materials systems is discussed, encompassing both historical developments and recent progress from the perspectives of technical innovations and the exploration of new material classes. The overarching goal is to illuminate pathways toward achieving high TC, expanding the potential of superconducting parameters across interfaces, and propelling superconductivity research toward practical, high‐temperature applications.

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Absence of weak localization effects in strongly underdoped La2−xSrxCuO4

Cited by 4 publications

References 26 publications

Variable range hopping in the spin-glass phase of La_2−xSr_xCuO₄

Variable range hopping in the spin-glass phase of La_2−xSr_xCuO₄

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

Advancing Superconductivity with Interface Engineering

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Absence of weak localization effects in strongly underdoped La2−xSrxCuO4

Cited by 4 publications

References 26 publications

Variable range hopping in the spin-glass phase of La2−xSrxCuO4

Variable range hopping in the spin-glass phase of La2−xSrxCuO4

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

Advancing Superconductivity with Interface Engineering

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Variable range hopping in the spin-glass phase of La_2−xSr_xCuO₄

Variable range hopping in the spin-glass phase of La_2−xSr_xCuO₄