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2016
DOI: 10.1103/physrevb.94.125437
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Absence of superconductivity in ultrathin layers of FeSe synthesized on a topological insulator

Abstract: The structural and electronic properties of FeSe ultrathin layers on Bi 2 Se 3 have been investigated with a combination of scanning tunneling microscopy and spectroscopy and angle-resolved photoemission spectroscopy. The FeSe multilayers, which are predominantly 3-5 monolayers (MLs) thick, exhibit a hole pocket-like electron band at¯ and a dumbbell-like feature atM, similar to multilayers of FeSe on SrTiO 3 . Moreover, the topological state of the Bi 2 Se 3 is preserved beneath the FeSe layer, as indicated by… Show more

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Cited by 25 publications
(29 citation statements)
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“…3c) indicates the presence of superconducting correlations in the TI material close to the interface. The atomic sharpness of this interface suggests that the topological surface state of the TI substrate stays intact as also shown recently by photoemission experiments for the case of a FeSe–Bi 2 Se 3 heterostructure41. The FeTe–Bi 2 Te 3 interface therefore provides an ideal platform to study the interesting physics of Dirac fermions interacting with Cooper pairs.…”
Section: Discussionsupporting
confidence: 68%
“…3c) indicates the presence of superconducting correlations in the TI material close to the interface. The atomic sharpness of this interface suggests that the topological surface state of the TI substrate stays intact as also shown recently by photoemission experiments for the case of a FeSe–Bi 2 Se 3 heterostructure41. The FeTe–Bi 2 Te 3 interface therefore provides an ideal platform to study the interesting physics of Dirac fermions interacting with Cooper pairs.…”
Section: Discussionsupporting
confidence: 68%
“…This is smaller than the 1 TL of bulk FeSe (~ 5.33 Å ), indicating that most of the FeSe is embedded inside Pb. Similar growth has been reported when FeSe film is grown on soft substrates [30][31][32]. The lattice modeling of FeSe and Pb estimates the thickness of our FeSe is 3 TL (see Supplemental Material) although it cannot be precisely determined by STM.…”
supporting
confidence: 80%
“…Journal of Nanomaterials the opposite trend (increased T c measured in thin films compared to those of bulk samples) has been observed in doubleatomic-layer Ga films on GaN [24], FeSe monolayer films on SrTiO 3 [27], and FeSe on TiO 2 [28]. These interesting results, together with the present work on the MBE-grown Al nanofilm, may suggest that the interface effects play a significant role in the enhanced superconductor transition temperature in a thin film over that of its bulk counterpart [29].…”
supporting
confidence: 41%