Abrupt heating-induced high-quality crystalline rubrene thin films for organic thin-film transistors

In SituPatterning of High-Quality Crystalline Rubrene Thin Films for High-Resolution Patterned Organic Field-Effect Transistors

“…An amorphous rubrene film is prepared on a SiO 2 dielectric layer by thermal evaporation ( Figure 1a). The amorphous rubrene film is directly transformed into a crystalline rubrene thin film by an abrupt heating process, 24 which was carried out by placing an as-deposited rubrene film on a preheated hot plate in a dark room at 170°C for 1 min (Figure 1b). The polarized optical microscopy (POM) image of the produced crystalline rubrene thin film reveals that a continuous crystalline film consisting of large-sized (average size = ∼80 μm) and well-faceted domains was created over the whole dielectric surfaces ( Figure 2a).…”

“…The SAED pattern in Figure 3b clearly displays a set of sharp and regular spots, and the pattern was indexed to an orthorhombic rubrene single-crystalline phase. 24 To demonstrate the effectiveness of our strategy, OFET devices were fabricated with the patterned crystalline rubrene films. For the devices, isolated crystalline rubrene wires with a width of 650 nm and a thickness of 20 nm were produced using the same technique for the microwires fabrication ( Figure 4a,b).…”

“…21À23 In our previous study, we reported that continuous, highly ordered, and uniaxially oriented crystalline rubrene thin films comprising large single-crystalline grains could be successfully prepared by an abrupt heating technique. 24 In this study, we report a straightforward strategy to fabricate patterned crystalline rubrene thin films for high-performance patterned OFETs. The formation of high-quality crystalline rubrene thin films and the patterning of the crystalline rubrene films are accomplished ABSTRACT For the realization of high-performance patterned organic field-effect transistors (OFETs), we present a novel approach to fabricate patterned crystalline rubrene thin films by combining an abrupt heating technique and a lift-off process.…”

Determination of crystal orientation in organic thin films using optical microscopy

“…The glass substrate was kept at room temperature during the deposition and the deposition rate was 1 Å/s. Amorphous film was re- crystallized using abrupt thermal annealing at 165 C and category 2 spherulites of triclinic rubrene were formed [35,36].…”

Patterning technology for solution-processed organic crystal field-effect transistors

“…Therefore, post-treatment after deposition that allows rearrangement of organic molecules is necessary. For instance, Lee et al [97] reported an abrupt thermal annealing method for rubrene thin films deposited onto SiO 2 substrate using thermal evaporation. The heating process was carried out by placing as-deposited rubrene films on a preheated hot plate set at 170 °C in a nitrogen environment for one minute.…”