Abrasive Distribution of the Fixed Diamond Wire in Wire Sawing Process

Chung, Chun Hui

doi:10.4028/www.scientific.net/amr.579.145

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…The research findings indicate that for silicon workpieces, tools with smaller groove depths, directions, and widths and larger groove coefficients can achieve better ductile cutting and improve the MRR. Chung et al [ 138 ] investigated the distribution of diamond abrasives on the wire for wire sawing processes. The results revealed that a larger spacing between the abrasives leads to a higher MRR.…”

Section: Machining Performance Of Dwsmentioning

confidence: 99%

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Zhou³

et al. 2023

Micromachines

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Due to the brittleness of silicon, the use of a diamond wire to cut silicon wafers is a critical stage in solar cell manufacturing. In order to improve the production yield of the cutting process, it is necessary to have a thorough understanding of the phenomena relating to the cutting parameters. This research reviews and summarizes the technology for the precision machining of monocrystalline silicon using diamond wire sawing (DWS). Firstly, mathematical models, molecular dynamics (MD), the finite element method (FEM), and other methods used for studying the principle of DWS are compared. Secondly, the equipment used for DWS is reviewed, the influences of the direction and magnitude of the cutting force on the material removal rate (MRR) are analyzed, and the improvement of silicon wafer surface quality through optimizing process parameters is summarized. Thirdly, the principles and processing performances of three assisted machining methods, namely ultrasonic vibration-assisted DWS (UV-DWS), electrical discharge vibration-assisted DWS (ED-DWS), and electrochemical-assisted DWS (EC-DWS), are reviewed separately. Finally, the prospects for the precision machining of monocrystalline silicon using DWS are provided, highlighting its significant potential for future development and improvement.

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Section: Machining Performance Of Dwsmentioning

confidence: 99%

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Zhou³

et al. 2023

Micromachines

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“…Researchers have focused on different aspects of the wire sawing process which can be classified into material removal mechanism [5][6][7], process modeling [8][9][10][11], and parametric study between process inputs and outputs [12][13][14][15][16]. In order to fulfill the strict requirements in wafer surface quality, some studies concentrate the ways to minimize surface defects by controlling wire and process parameters [5,13,14].…”

Section: Introductionmentioning

confidence: 99%

Depth of cut per abrasive in fixed diamond wire sawing

Chung

2015

Int J Adv Manuf Technol

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Because of the high requirement for quality, the surfaces of prime wafers have to be flat and without damages. During the first machining process in wafer manufacturing, the defects introduced by wire sawing must be removed by the subsequent lapping, grinding, and polishing processes. Therefore, the quality of sliced wafer is very important. Fixed diamond wire saw, on which the diamond grains are coated as abrasives, has become the major tool to slice ingot into wafers. Ductile-regime machining is an attractive process to achieve crack free surface on brittle materials in abrasive machining process. The depth of cut of the abrasive is a hint for the transition between ductileand brittle-regime machining. In order to understand the cutting behavior in fixed diamond wire sawing, this paper presents an investigation of depth of cut per abrasive based on the wire profile model developed by the authors. The simulation results show that the larger depths of cut are unavoidable in fixed diamond wire sawing because of the random position and size distribution of diamond grains on the wire. Although the number of active abrasives and the depths of cut at the bottom of slicing groove are larger than those at the side of the groove, few larger diamond Van-Nhat Le grains may introduce larger depths of cut and cracks on the side, which is the sliced wafer surface. Effects of process parameters to the depth of cut distributions are also analyzed. The variation in number of active abrasives in cutting zone as well as their depth of cut shows the possibility to increase process productivity without increasing the depths of cut of the diamond grains. Consequently, the surface quality could be remained without further deterioration.

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