Above room temperature ferromagnetism in Mn-ion implanted Si

Bolduc, M.; Awo-Affouda, C.; Stollenwerk, Andrew J.; Huang, Mengbing; Ramos, F. Javier; Agnello, Gabriel; LaBella, V. P.

doi:10.1103/physrevb.71.033302

Cited by 261 publications

(172 citation statements)

References 29 publications

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“…As previously observed for Mn-containing samples [16,17] and in accordance with the literature [34,35], the MFM measurements for the Co-free Si and Ge films (both amorphous and annealed up to crystallization temperature) did not exhibit any magnetic contrast. When annealed at high temperatures, the XRD results indicated that non-magnetic phases were present in the films containing Co.…”

Section: Resultssupporting

confidence: 71%

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

Ferri¹,

Pereira-da-Silva

2012

Materials Chemistry and Physics

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Section: Resultssupporting

confidence: 71%

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

Ferri¹,

Pereira-da-Silva

2012

Materials Chemistry and Physics

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“…Diluted magnetic semiconductor (DMS) can serve as an avenue to utilize both charge and spin functions of electrons for various applications [1]. Many group IV [2], III-V [3], and II-VI [3] DMS materials have been obtained by doping magnetic impurities into semiconductors. Nevertheless, most of them have a low Curie temperature (T C ), which limits their practical applications.…”

mentioning

confidence: 99%

Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering

Gao

Liu

et al. 2010

Appl. Phys. A

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All Zn 1−x Er x O (x = 0.04, 0.05, and 0.17) films deposited on glass substrates by radio-frequency reactive magnetron sputtering exhibit the mixture of ferromagnetic and paramagnetic phases at room temperature. The estimated magnetic moment per Er ion decreases with the increase of Er concentration. The temperature dependence of the magnetization indicates that there is no intermetallic ErZn buried in the films. The ferromagnetism is attributed to the Er ions substitution for Zn 2+ in ZnO lattices, and it can be interpreted by the bound-magnetic-polaron model.In semiconductor devices, one usually takes advantage of the charge of electrons. In contrast, magnetic materials are utilized on the basis of electron spin. In order to develop new electronics, it is necessary to combine both features. Diluted magnetic semiconductor (DMS) can serve as an avenue to utilize both charge and spin functions of electrons for various applications [1]. Many group IV [2], III-V [3], and II-VI [3] DMS materials have been obtained by doping magnetic impurities into semiconductors. Nevertheless, most of them have a low Curie temperature (T C ), which limits their [15]. Nevertheless, the magnetic properties of Er-doped ZnO materials have seldom been reported. In this paper, the magnetic properties of a series of Er-doped ZnO thin films are studied and the origin of FM is also discussed.The transparent Er-doped ZnO films were grown on glass substrates by radio-frequency (RF) reactive magnetron sputtering using Zn (purity: 99.99%) and Er (purity: 99.996%) together as targets. The sputtering chamber was evacuated by a molecular pump to a base pressure below 2 × 10 −5 Pa. During sputtering, the substrate temperature was kept at RT. Oxygen was introduced into the chamber as the reactive gas and the flow rate was controlled at 20, 25, 30, and 35 sccm, respectively. Additionally, argon was introduced into the chamber as working gas and its flow rate was regulated at 15 sccm. During the deposition, the chamber pressure and sputter power were fixed at 2.0 Pa and 5.3 W/cm 2 , respectively. The as-grown samples are denoted as Zn 1−x Er x O. Magnetic measurements were performed by vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID), where the magnetic fields were parallel to the film planes. X-ray photoelectron spectroscopy (XPS) was used to analyze chemical valences and chemical compositions of the films.

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“…The interfacial quality may have a strong effect on the injection efficiency so epitaxial growth will be necessary. Materials such as dilute magnetic semiconductors Mn-doped Si [68], Mn-doped chalcopyrites [69][70][71][72][73] or the 'pure' ferromagnetic semiconductor EuO [74] have all been suggested, but none as yet have been demonstrated as spin injectors for Si. It should be noted that while their intrinsic compounds are indeed semiconductors, owing to the carrier-mediated nature of the ferromagnetism, it is seen only in highly (i.e.…”

Section: Spins In Siliconmentioning

confidence: 99%

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to recover the transit-time distribution from precession measurements and determine the spin current velocity, diffusion constant and spin lifetime, constituting a spin 'HaynesShockley' experiment without time-of-flight techniques. A perspective on the future of these methods is offered as a summary.

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Above room temperature ferromagnetism in Mn-ion implanted Si

Cited by 261 publications

References 29 publications

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

The composition, structure and optical properties of weakly magnetic Co-containing amorphous Si and Ge films

Magnetic properties of Er-doped ZnO films prepared by reactive magnetron sputtering

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

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