Above IC integrated SrTiO3 high K MIM capacitors

Defaÿ, E.; Wolozan, David; Garrec, Pierre; Bernard, André; Ulmer, L.; Aid, M.; Blanc, J.P.; Serret, E.; Delpech, P.; Giraudin, J.-C.; Guillan, J.; Pellissier, Denis; Ancey, P.

doi:10.1109/essder.2006.307669

Cited by 7 publications

(6 citation statements)

References 11 publications

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“…High capacitance densities may be reached by decreasing the dielectric thickness, increasing the surface area or by using a dielectric with high permittivity (k). High-k materials have been widely investigated in microelectronics as a replacement for silicon oxide in transistors and they appear as well for integrated capacitors: in particular Ta 2 O 5 [22,23] Al 2 O 3 [22], STO [24], BST, PZT [25]. However, in planar configuration, the capacitance density for 10 V applications is rarely higher than 10 nF/mm² [26].…”

Section: B Capacitor Designmentioning

confidence: 99%

Design and realization of highly integrated isolated DC/DC micro-converter

Deleage¹,

Crébier²,

Brunet

et al. 2009

2009 IEEE Energy Conversion Congress and Exposition

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This paper deals with the design and the realization of an integrated isolated HF DC to DC converter for low voltage and low power conditioning applications (3,3V and 1W). It is based on the 3D integration of several elementary silicon dies in which have been integrated essential components such as the inverter, the rectifier, the HF transformer, the input and output capacitors and the output inductor. The paper deals with the silicon integration of all these elements, the presentation of our work being related with the state of the art. Then it focuses on a global estimation of the whole converter functional performances at 1MHz switching frequency. Practical but partial implementation was carried out. The inverter and the rectifier are designed in CMOS technology (Austria Micro Systems 0.35µm) and have been optimized to operate at high frequency (1MHz) in order to reduce the size of passive devices. We have integrated monolithically all is necessary for this function. The transformer as well as the inductor and the capacitors are also integrated on separate silicon dies. Their integration is discussed as well as their design and practical characterization. Based on all these pieces, the overall converter efficiency is estimated in simulation based on practical characterizations. It appears that correct efficiency with a reasonable silicon surface and volume can be reached.

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Section: B Capacitor Designmentioning

confidence: 99%

Design and realization of highly integrated isolated DC/DC micro-converter

Deleage¹,

Crébier²,

Brunet

et al. 2009

2009 IEEE Energy Conversion Congress and Exposition

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show abstract

“…Based on such architecture, a 35 nF/mm 2 MIM capacitor has been developed with an Al 2 O 3 dielectric of 20 nm, whereas the capacitance density is only 3.5 nF/mm 2 in planar MIM architecture. MIM capacitors using ferroelctric materials such as STO, BTO and PZT have also been studied intensively, and they have a very high dielectric constant favourable for achieving a very high capacitance dencity (Ouajji H. et al, 2005;Defaÿ E. et al, 2006;Wang S. et al, 2006, Banieki J. D. et al, 1998. These materials usually need high-temperature processing and noble metals for the electrodes.…”

Section: Ipd Resistorsmentioning

confidence: 99%

Integrated Passives for High-Frequency Applications

Mi¹,

Ueda²

2010

Advanced Microwave Circuits and Systems

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Introduction 1.1 Definitions of Integrated Passives Passive elements are indispensable in RF systems and are used for matching networks, LC tank circuits, attenuators, filtering, decoupling purposes and so on (Tilmans H. A C et al., 2003). Passive elements can be simply classified into distributed elements including transmission lines and waveguides, and lumped elements including inductors, capacitors and resistors. The distributed circuits take into account the phase shift occurring when the signal wave propagates along the circuits. As the operating frequency moves into the microwave spectrum, the distributed circuits have a higher Q factor, and thus they are usually used for high-frequency applications. Lumped elements are zero-dimensional by definition. In other words, the lumped elements have no physical dimensions which are significant with respect to the wavelength at the operating frequency, so that the phase shift that arises can be ignored. Discrete lumped elements are conventionally used in electronic circuits that work at a lower frequency. This is because the sizes of the discrete lumped elements become comparable to the wavelength at microwave frequencies. With the advent of new photolithography and passive integration technologies, the three basic building blocks for circuit design-inductors, capacitors, and resistors can be made small enough to be available in lumped form (Tummala R. R. et al., 2000). Lumped passive components may be discrete, integrated or embedded. The discrete is a singular device in a leaded or surface mount technology (SMT) case. This includes screen-printed resistors, capacitors, and inductors. Passive integration technologies allow several passive components to be integrated, either into a substrate (embedded) or onto a substrate (integrated). Integrated passive devices usually come in a compact SMT package or chipscale package (CSP) as a stand-alone component with input, output and ground terminations, which is much smaller than the operating wavelength providing some complete circuit functions, such as impedance-matching, filtering and so on, for highfrequency applications up to several tens of GHz (Tilmans H. A C et al., 2003). The lumped element circuits have the advantage of a smaller size, lower cost, and wide-band characteristics, though the Q factor is generally lower than distributed circuits. Integrated lumped passive circuits with a small form factor are especially suitable for some RF and microwave applications where real estate or wide-band requirements are of prime importance, for example mobile phones or other handheld wireless products. The choice 13 www.intechopen.com

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“…Based on such architecture, a 35 nF/mm 2 MIM capacitor has been developed with an Al 2 O 3 dielectric of 20 nm, whereas the capacitance density is only 3.5 nF/mm 2 in planar MIM architecture. MIM capacitors using ferroelctric materials such as STO, BTO and PZT have also been studied intensively, and they have a very high dielectric constant favourable for achieving a very high capacitance dencity (Ouajji H. et al, 2005;Defaÿ E. et al, 2006;, Banieki J. D. et al, 1998. These materials usually need high-temperature processing and noble metals for the electrodes.…”

Section: Ipd Capacitorsmentioning

confidence: 99%

Advanced Microwave Circuits and Systems

Zhurbenko

2010

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Above IC integrated SrTiO3 high K MIM capacitors

Cited by 7 publications

References 11 publications

Design and realization of highly integrated isolated DC/DC micro-converter

Design and realization of highly integrated isolated DC/DC micro-converter

Integrated Passives for High-Frequency Applications

Advanced Microwave Circuits and Systems

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