About bond model of S-type negative differential resistance in GaP LEDs

Gaydar, G.; Konoreva, O.V.; Maliy, Ye.; Olikh, Ya. М.; Petrenko, V. V.; Pinkovska, M.B.; Radkevych, O. I.; Tartachnyk, V.P.

doi:10.1016/j.spmi.2017.02.042

Cited by 7 publications

(4 citation statements)

References 5 publications

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“…Current-voltage characteristics of GaAs 1-х P х LEDs at low temperatures (T = 77…95 K) contain two regions of negative differential resistance, which is also characteristic of GaP diodes. The origin of the upper region, as suggested in Ref [15], may be related to bandto-band transitions between Е 1c → Е Зc , when the electric field within the p-n junction reaches Е = 10 6 V/m. It is possible to estimate the value of this field in the case of the GaAs 1-х P х diode within 77…95 K intervals from Fig.…”

Section: Resultsmentioning

confidence: 82%

Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons

Vernydub¹,

Kyrylenko²,

Konoreva³

et al. 2020

SPQEO

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Commercial orange and yellow GaAs 1-х P х LEDs were irradiated by 2 MeV electrons with fluences of 10 14 …2•10 16 сm-2 , and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown that point radiation defects introduced into GaAs 1-х P х diodes reduce the electrical conductivity of the base. The series and parallel resistances of the device increase, compensating the electrical conductivity of the base and reducing the probability of forming the avalanche breakdown channels. Negative differential resistance regions that appear in current-voltage characteristics are the result of the presence of a GaP sublattice in the solid solution. During irradiation, the switching voltage into the low-level state increases due to expansion of junction depleted region. The streamlined currents increase after irradiation is caused by changing in the free path length of charge carriers.

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Section: Resultsmentioning

confidence: 82%

Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons

Vernydub¹,

Kyrylenko²,

Konoreva³

et al. 2020

SPQEO

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“…The damage coefficient of the lifetime of minority charge carriers K  , determined from the dose dependence of the glow intensity of the GaAsP LED, is The main feature of the CVCs, as can be seen from Fig. 5, is the existence of the NDR region, the nature of which for GaP diodes was discussed in [20]. In the samples under study, its occurrence is obviously associated with the presence of GaP in the GaAsP solution.…”

Section: Resultsmentioning

confidence: 93%

“…The appearance of S-similarity in GaP LEDs caused by the peculiarities of the C-band structure; the formation of the N-region is associated with the tunneling transitions of carriers band-defect-band [20].…”

Section: Resultsmentioning

confidence: 99%

RADIATION DEFECTS IN GaP, GaAsP, InGaN LEDs

Vernydub¹,

Kyrylenko²,

Konoreva³

et al. 2021

RAD Conference Proceedings

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The results of the effect of irradiation by electrons with E = 2 MeV, F = 2.6 • 10 16 cm -2 on LEDs grown on the basis of GaP and GaAsP homojunctions, as well as on InGaN/GaN heterojunction structures with quantum wells are presented. The consequences of irradiation with γ-quanta from Со 60 from an absorbed dose of 1.5 Mrad are analyzed. It is revealed that the introduction of radiation defects is accompanied by a decrease in the glow intensity due to the capture of charge carriers by deep levels of defects, an increase in the differential resistance, and a decrease in the reverse currents of p-n junctions. Isochronism annealing of irradiated samples is multistage and proceeds within the range (20 ÷ 300 °С, for GaP LEDs) and (20 ÷ 450 °С, for GaAsP LEDs). The maximum quantum output of InGaN LEDs has been 32 %, irradiated with γ-Со 60 with an absorbed dose of 1.5 Mrad -17 %.

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“…It is known that current lacing in such objects can be a consequence of intervalley transfer of carriers, resonant tunneling between QWs, double injection of electrons and holes into a high-impedance depleted region, etc. [25][26][27]. One of the possible versions that can be used to explain the mechanism of NDC formation in GaP LEDs was discussed in [27], where it is emphasized that due to the peculiarities of the band structure in this crystal at low temperatures, the mechanism of intervalley scattering can be triggered.…”

Section: Resultsmentioning

confidence: 99%

Properties of the Original Electron-Irradiated LEDs Homojunction GaP, GaAsP and Heterojunction InGaN Structures

Zahorodnia,

Melnychenko,

Tartachnyk

et al. 2024

J. Nano- Electron. Phys.

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The work contains a detailed review of the results of research published in recent years on homojunction light-emitting diodes (LEDs) grown on the basis of GaP and GaAsP solid solution, as well as InGaN heterojunction structures with quantum wells (QWs).In order to identify the cause of the instability of the microplasma glow, it is important to analyze the electrical and spectral characteristics of the studied structures. The purpose of the study was to identify the cause that leads to the deviation from the typical dependences of I(U) and L(I) and to identify possible physical factors that underlie the occurrence of anomalies of the LEDs-radiation.The original part is based on a comparative analysis of experimental data obtained during the study of the electrophysical and spectral characteristics of both types of LEDs.The results of the study of the influence of radiation defects introduced by electrons with E = 2 MeV on the fundamental and operational parameters of the studied diodes are also presented.The increase in the differential resistance of homotransient GaP and GaAsP LEDs due to a decrease in temperature and irradiation is caused by the capture of current carriers by deep impurity levels, as well as levels of radiation defects. The value of the barrier potential of the diodes at the doses used (Fmax = 10 15 cm -2 for GaP diodes; Fmax = 2.64 cm -2 for GaAsP diodes) is practically unchanged.In InGaN heterostructure LEDs with QWs (hν = 505 nm) the NDC region begins after cooling to T ≤ 130 K; its occurrence may be related to the effect of resonant tunneling of current carriers.The short-wavelength parts of the GaP, GaAsP, and InGaN LEDs emission lines agree well with the classical Gaussian distribution; long-wavelength ones are stretched towards long-wavelengths, which is caused by the effect of the tails of the density of states (TDS) in both homo-and heterotransition structures.

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About bond model of S-type negative differential resistance in GaP LEDs

Cited by 7 publications

References 5 publications

Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons

Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons

RADIATION DEFECTS IN GaP, GaAsP, InGaN LEDs

Properties of the Original Electron-Irradiated LEDs Homojunction GaP, GaAsP and Heterojunction InGaN Structures

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