Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory

Hsu, Chih-Chieh; Chen, Yuting; Chuang, Po-Yang; Lin, Yu-Sheng

doi:10.1109/ted.2018.2831906

Cited by 15 publications

(10 citation statements)

References 51 publications

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“…[59] Typical precursors for ZTO solutions are tin chloride (SnCl 2 ) and zinc chloride (ZnCl 2 ), [17,20] with zinc acetate (Zn(CH 3 COO) 2 ) also being reported as an alternative. [33] AZTO solutions have also been analyzed for the fabrication of memristive active layers. With an optimal amount of aluminium doping, solution-processed ZTO TFT´s have shown enhanced electrical properties.…”

Section: Solution Processing Techniquesmentioning

confidence: 99%

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Silva,

Deuermeier,

Zhang

et al. 2023

Adv Elect Materials

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As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in‐memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco‐friendly zinc‐tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low‐cost, and critical‐raw‐material‐free composition. In this perspective article, the research progress on ZTO‐based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms.

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Section: Solution Processing Techniquesmentioning

confidence: 99%

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Silva,

Deuermeier,

Zhang

et al. 2023

Adv Elect Materials

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Section: Metal Salt Precursorsmentioning

confidence: 99%

“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c. [ 99,165,166 ] Their low processing temperature is related to the high volatility of the decomposition byproducts, leading to a higher purity in the final product.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

“…It constitutes a substantial portion of the oxide precursor solutions: around 98% and 90% for lower and higher concentrations, respectively. The most common solvents in solution‐based metal oxide RRAMs are 2‐methoxyethanol (2‐ME), [ 63,72,79,80,98,102,104,105,107,109,112,113,115–119,121,127,129,130,133,134,137,139,142,144,150–153,158,159,168–185 ] ethanol, [ 72,77,78,82,103,108,113,114,120,126,132,135,136,138,145,147,157,162–164,168,186–200 ] deionized (DI) water, [ 73,101,116,120,123,148,162,163,190,201 ] acetic acid, [ 103,121,129–131,134,140,142,144,149,150,152,154,173,179,180,183,202 ] and isopropanol [ 23,123,125,128,136,169,181,203 ] among others (ethylene glycol, [ 141,204 ] 2‐butoxyethanol, [ 205 ] acetylacetone, [ 149 ] and acetonitrile […”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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“…21 In addition, In-free amorphous oxide materials have also received extensive attention, such as ZnSnO-based materials. [22][23][24] However, there is still the lack of systematic research on the design and selection of related amorphous materials.…”

Section: Introductionmentioning

confidence: 99%

Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films

et al. 2022

J. Mater. Chem. C

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Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory

Cited by 15 publications

References 51 publications

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films

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