Abnormal negative thermal quenching of photoluminescence in CdMnTe:In crystals

Yu, Pengfei; Liu, Wenfei; Shao, Tingquan; Gao, Pandeng; Jiang, Biru; Liu, Chongqi; Ma, Zhefan

doi:10.1016/j.optmat.2021.111379

Cited by 7 publications

(5 citation statements)

References 20 publications

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“…This is unusual as most metal chlorides have stronger PL intensities at lower temperature, i.e. thermal quenching [47–49] . Similar anti‐thermal quenching phenomena have also been observed in few other 0D luminous antimony chlorides, [24] and tin chlorides [50] .…”

Section: Resultssupporting

confidence: 66%

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Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl₅] Geometry

Sun

Deng

et al. 2023

Angewandte Chemie

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Hybrid organic-inorganic antimony halides have attracted increasing attention due to the non-toxicity, stability, and high photoluminescence quantum yield (PLQY). To shed light on the structural factors that contribute to the high PLQY, five pairs of antimony halides with general formula A 2 SbCl 5 and A 2 Sb 2 Cl 8 are synthesized via two distinct methods and characterized. The A 2 SbCl 5 type adopts square pyramidal [SbCl 5 ] geometry with near-unity PLQY, while the A 2 Sb 2 Cl 8 adopts seesaw dimmer [Sb 2 Cl 8 ] geometry with PLQY � 0 %. Through combined data analysis with the literature, we have found that A 2 SbCl 5 series with square pyramidal geometry generally has much longer Sb•••Sb distances, leading to more expressed lone pairs of Sb III . Additional factors including SbÀ Cl distance and stability of antimony chlorides may also affect PLQY. Our targeted synthesis and correlated insights provide efficient tools to precisely form highly emissive materials for optoelectronic applications.

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Section: Resultssupporting

confidence: 66%

“…thermal quenching. [47][48][49] Similar anti-thermal quenching phenomena have also been observed in few other 0D luminous antimony chlorides, [24] and tin chlorides. [50] It further confirms the STE emission mechanism of (Pr 3 BzN) 2 SbCl 5 and (Me 3 BzN) 2 SbCl 5 .…”

Section: Methodssupporting

confidence: 75%

Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl₅] Geometry

Sun

Deng

et al. 2023

Angewandte Chemie

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“…The analysis of the PL peak intensity is presented in Figure b. Up to approximately 100 K, the PL intensity increases with increasing temperature (negative thermal quenching), which can be observed in the case of defect-related emissions for some semiconductors. − Above this temperature, the intensity decreases, and at room temperature, it is weaker by 4 orders of magnitude. The activation energy ( E a ) calculated from the Arrhenius formula I ( T ) nobreak0em0.25em⁡ ∝ nobreak0em0.25em⁡ I 0 normale E italica / k italicB T , where I 0 is the PL intensity before the thermal quenching, is 12 ± 4 meV.…”

Section: Resultsmentioning

confidence: 95%

Electronic Band Structure and Optical Properties of HgPS₃ Crystal and Layers

de Simoni,

Rybak,

Antonatos

et al. 2024

J. Phys. Chem. C

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Transition metal thiophosphates (MPS 3 ) are of great interest due to their layered structure and magnetic properties. Although HgPS 3 may not exhibit magnetic properties, its uniqueness lies in its triclinic crystal structure and in the substantial mass of mercury, rendering it a compelling subject for exploration in terms of fundamental properties. In this work, we present comprehensive experimental and theoretical studies of the electronic band structure and optical properties for the HgPS 3 crystal and mechanically exfoliated layers from a solid crystal. Based on absorption, reflectance and photoluminescence measurements supported by theoretical calculations, it is shown that the HgPS 3 crystal has an indirect gap of 2.68 eV at room temperature. The direct gap is identified at the Γ point of the Brillouin zone (BZ) ≈ 50 meV above the indirect gap. The optical transition at the Γ point is forbidden due to selection rules, but the oscillator strength near the Γ point increases rapidly and therefore the direct optical transitions are visible in the reflectance spectra approximately at 60−120 meV above the absorption edge, across the temperature range of 40 to 300 K. The indirect nature of the bandgap and the selection rules for Γ point contribute to the absence of nearbandgap emission in HgPS 3 . Consequently, the photoluminescence spectrum is primarily governed by defect-related emission. The electronic band structure of HgPS 3 undergoes significant changes when the crystal thickness is reduced to tri-and bilayers, resulting in a direct bandgap. Interestingly, in the monolayer regime, the fundamental transition is again indirect. The layered structure of the HgPS 3 crystal was confirmed by scanning electron microscopy (SEM) and by mechanical exfoliation.

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“…In the present work, it was observed that all the defect emission bands of Cu 2 O crystal samples are subjected to the negative thermal quenching NTQ, where luminescence intensity increases with temperature rise in some temperature range (see Figure 5 a) for the 720 and 910 nm emission bands of the crystal sample (111). Previously NTQ of emission bands was observed in different materials and explained by different mechanisms: in doped GaN by quenching of a competitive intense luminescence band or a nonradiative channel [ 46 ], in sandwiched single layer MoS 2 by raising radiative recombination rate of the excess delocalized carriers created from the carrier hopping from the shallow defect states to the band edges [ 48 ], in CdMnTe by the participation of intermediate states of impurities in recombination processes, and in ZnO and CdMnTe by the presence of intermediate defect states and nonradiative channels [ 52 , 53 ]. Some authors explain NTQ by thermal activation of charge carriers and trapped excitons from shallow traps followed by their localization at radiative centers [ 28 , 49 , 54 ].…”

Section: Discussionmentioning

confidence: 99%

Luminescence Properties of Epitaxial Cu2O Thin Films Electrodeposited on Metallic Substrates and Cu2O Single Crystals

et al. 2023

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The luminescent properties of epitaxial Cu2O thin films were studied in 10–300 K temperature range and compared with the luminescent properties of Cu2O single crystals. Cu2O thin films were deposited epitaxially via the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships. Cu2O (100) and (111) single crystal samples were cut from a crystal rod grown using the floating zone method. Luminescence spectra of thin films contain the same emission bands as single crystals around 720, 810 and 910 nm, characterizing VO2+, VO+ and VCu defects, correspondingly. Additional emission bands, whose origin is under discussion, are observed around 650–680 nm, while the exciton features are negligibly small. The relative mutual contribution of the emission bands varies depending on the thin film sample. The existence of the domains of crystallites with different orientations determines the polarization of luminescence. The PL of both Cu2O thin films and single crystals is characterized by negative thermal quenching in the low-temperature region; the reason of this phenomenon is discussed.

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Abnormal negative thermal quenching of photoluminescence in CdMnTe:In crystals

Cited by 7 publications

References 20 publications

Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl₅] Geometry

Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl₅] Geometry

Electronic Band Structure and Optical Properties of HgPS₃ Crystal and Layers

Luminescence Properties of Epitaxial Cu2O Thin Films Electrodeposited on Metallic Substrates and Cu2O Single Crystals

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Abnormal negative thermal quenching of photoluminescence in CdMnTe:In crystals

Cited by 7 publications

References 20 publications

Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl5] Geometry

Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl5] Geometry

Electronic Band Structure and Optical Properties of HgPS3 Crystal and Layers

Luminescence Properties of Epitaxial Cu2O Thin Films Electrodeposited on Metallic Substrates and Cu2O Single Crystals

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Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl₅] Geometry

Achieving Near‐unity Photoluminescence Quantum Yields in Organic‐Inorganic Hybrid Antimony (III) Chlorides with the [SbCl₅] Geometry

Electronic Band Structure and Optical Properties of HgPS₃ Crystal and Layers