Abnormal Cell-to-Cell Interference of NAND Flash Memory

Abstract

Abnormal increase of cell-to-cell interference in 2y-nm NAND flash memory has been discussed. When a p-type floating gate (FG) and control gate (CG) are introduced, the depletion region variation depending on operation modes in the FG and CG affects CG-to-FG coupling capacitance and threshold voltage variation. It has also been found that there is a symmetry between n-type FG/CG and p-type FG/CG flash memory in terms of cell-to-cell interference.